Minority carrier lifetime and diffusion length in Si 1-x-y Ge x C y and Si 1-y C y heterolayers

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 283-287

  Samanta, S K ^a   Dalapati, G K ^a   Chatterjee, S ^a   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

C t measurement; Diffusion length; Heterostructures; Minority carrier lifetime; Silicon carbon; Silicon germanium carbon

Indexed keywords

CAPACITORS; CARBON; DIFFUSION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SILICON ALLOYS; TENSILE PROPERTIES; THIN FILMS; ZIRCONIUM COMPOUNDS;

C-T MEASUREMENT; DIFFUSION LIFETIME; MINORITY CARRIER LIFETIME; SILICON CARBON; SILICON GERMANIUM CARBON;

TERNARY SYSTEMS;

EID: 1142292390     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.055     Document Type: Conference Paper

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