Fourier-transform infrared investigations of Si1-yCy structures for hetero bipolar transistor applications

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 97-100

  Gruber, D ^a   Muhlberger M ^a   Fromherz, T ^a   Schaffler F ^a   Schatzmayr, M ^b  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b AMS AG   (Austria)

Author keywords

Carbon; Fourier transform infrared; Germanium; Hetero bipolar transistor; Silicon

Indexed keywords

ANNEALING; CARBON; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; POLYSILICON; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

POLYSILICON EMITTERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0037074779     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00809-1     Document Type: Conference Paper

References (14)