Optimized processing for differentially molecular beam epitaxy-grown SiGe(C) devices

Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 21-25

  Lippert, G ^a   Osten, H J ^a   Blum, K ^a   Sorge, R ^a   Schley, P ^a   Kruger D ^a   Fischer, G ^a  

^a IHP   (Germany)

Author keywords

Carrier lifetime; H passivation; Heterobipolar transistor; SiGe; SiGe C

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CHEMICAL CLEANING; FILM GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY PHOTOELECTRON SPECTROSCOPY;

ULTRA HIGH VACUUM (UHV);

SEMICONDUCTING FILMS;

EID: 0032067627     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00437-4     Document Type: Article

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