Characterization of SiGeC thin films by MeV ion scattering and X-ray diffraction

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 143-147

  Nagaki, Masakane ^a   Narusawa, Tadashi ^a   Hiraki, Akio ^a   Saitoh, Tohru ^b   Kubo, Minoru ^b  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CRYSTAL LATTICES; FILM GROWTH; RELAXATION PROCESSES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; X RAY CRYSTALLOGRAPHY;

NON-RUTHERFORD RESONANT ION SCATTERING METHODS; STRAIN RELAXATION;

SEMICONDUCTING FILMS;

EID: 0034229204     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00794-X     Document Type: Article

References (5)

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2. Paul D.J. Thin Solid Films. 321:1998;172.
3. Harame D.L., Comfort J.H., Cressler J.D., Crabbe E.F., Sun J.Y.-C., Meyerson B.S., Tice T. IEEE Trans. Electron Devices. 42:(3):1995;455.
4. Tesmer J.R., Nastasi M. Handbook of Modern Ion Beam Materials Analysis. 1995;Materials Research Society.
5. Feldman L.C., Mayer J.W., Picraux S.T. Materials Analysis by Ion Channeling. 1982;Academic Press, New York.