High performance rf front end circuits using SiGe:C BiCMOS + copper technologies

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 405-409

  Watanabe, Glenn ^a   Ortiz, Jeff ^a   Holbrook, Rick ^a  

^a MOTOROLA INC   (United States)

Author keywords

84.30.Bv Circuit theory (including computer aided circuit design and analysis); 84.40.Dc Microwave circuits; 85.30.Pq Bipolar transistors; 85.40. e Microelectronics: LSI, VLSI, ULSI

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITANCE; COMPUTER AIDED LOGIC DESIGN; COMPUTER AIDED NETWORK ANALYSIS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROELECTRONICS; MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR SWITCHES; SPURIOUS SIGNAL NOISE; ULSI CIRCUITS;

84.30.BV CIRCUIT THEORY; 84.40.DC MICROWAVE CIRCUITS; 85.30.PQ BIPOLAR TRANSISTORS; 85.40.-E MICROELECTRONICS;

CMOS INTEGRATED CIRCUITS;

EID: 1142304512     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.074     Document Type: Conference Paper

References (12)

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