Growth of SiGeC layers by GSMBE and their characterization by X-ray techniques

Proceedings - Electrochemical Society

Volumn 7, Issue , 2004, Pages 203-214

  Zhang, J ^a   Neave, J H ^a   Li, X B ^a   Fewster, P P ^b   El Mubarek, H A W ^c   Ashburn, P ^c   Mitrovic, I Z ^d   Buiu, O ^d   Hall, S ^d  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b MALVERN INSTRUMENTS LTD   (United Kingdom)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^d UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; BAND STRUCTURE; CARBON; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DIFFRACTOMETERS; DIFFUSION; DOPING (ADDITIVES); MOLECULAR BEAM EPITAXY; MONOCHROMATORS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILANES; X RAY DIFFRACTION;

COMPRESSIVE STRAIN; INCIDENT BEAM OPTICS; METHYLSILANES; X-RAY REFLECTIVITY (XRR);

SILICON COMPOUNDS;

EID: 11844261220     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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