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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 12, 2003, Pages 7276-7283

Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450 nm

(10) Onuma, Takeyoshi a Chichibu, Shigefusa F a,b Aoyama, Toyomi c Nakajima, Kiyomi d Ahmet, Parhat d Azuhata, Takashi e Chikyow, Toyohiro c,d Sota, Takayuki f Nagahama, Shin Ichi g Mukai, Takashi g

a UNIVERSITY OF TSUKUBA (Japan)

b RIKEN (Japan)

c TOKYO INSTITUTE OF TECHNOLOGY (Japan)

d NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

e HIROSAKI UNIVERSITY (Japan)

f WASEDA UNIVERSITY (Japan)

g NICHIA CORPORATION (Japan)

Author keywords

Exciton localization; Franz Keldysh oscillation; InGaN; LD; Piezoelectric field; Quantum confined Stark effect; Recombination dynamics

Indexed keywords

ELECTRON TUNNELING; EXCITONS; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; PIEZOELECTRICITY; POLARIZATION; QUANTUM WELL LASERS; SEMICONDUCTOR JUNCTIONS; SUPERLATTICES;

EXCITON LOCALIZATION; FRANZ-KELDYSH OSCILLATION; INGAN; QUANTUM-CONFINED STARK EFFECT; RECOMBINATION DYNAMICS;

ELECTRIC FIELDS;

EID: 10744228544 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.7276 Document Type: Article

Times cited : (19)

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