Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells

Journal of Applied Physics

Volumn 93, Issue 4, 2003, Pages 2051-2054

  Chichibu, S F ^a,b   Onuma, T ^a,b   Sota, T ^c   DenBaars, S P ^b,d   Nakamura, S ^b,d   Kitamura, T ^e,f   Ishida, Y ^e   Okumura, H ^e  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c WASEDA UNIVERSITY   (Japan)

^d University of California   (United States)

^e NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^f TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; THERMAL EFFECTS;

RECOMBINATION PROCESSES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037443057     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1535746     Document Type: Article

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