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Semiconductor Science and Technology

Volumn 16, Issue 4, 2001, Pages 243-249

Side contact effects on the capacitance properties of junction devices. Application to III-nitrogen structures

(1) Izpura, J I a

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC FREQUENCY MEASUREMENT; EPITAXIAL GROWTH; GALLIUM NITRIDE; GEOMETRY; WHITE NOISE;

CAPACITANCE VOLTAGE MEASUREMENTS; JUNCTION DEVICES; SIDE CONTACT EFFECTS; TRANSFER LENGTH;

SEMICONDUCTOR JUNCTIONS;

EID: 0035309096 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/4/310 Document Type: Article

Times cited : (4)

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