Plasma-assisted formation of low defect density SiC-SiO2 interfaces

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 1097-1104

  Golz A ^a   Lucovsky, G ^b   Koh, K ^b   Wolfe, D ^b   Niimi, H ^b   Kurz, H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037621184     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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