I - V and deep level transient spectroscopy studies on 60 MeV oxygen ion irradiated NPN transistors

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 215, Issue 3-4, 2004, Pages 457-470

  Gnana Prakash, A P ^a   Ke, S C ^a   Siddappa, K ^b  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

^b MANGALORE UNIVERSITY   (India)

Author keywords

Electron irradiation; Ion irradiation; MOSFET; Trapped charge; Voltage shift

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DEGRADATION; DOPING (ADDITIVES); ELECTRON IRRADIATION; GAMMA RAYS; OXYGEN; RADIATION EFFECTS; SILICA;

ION IRRADIATION; TRAPPED CHARGES; VOLTAGE SHIFTS;

MOSFET DEVICES;

EID: 0942289564     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.09.015     Document Type: Article

References (58)

1. Witczak S.C., Lacoe R.C., Shaneyfelt M.R., Mayer D.C., Schwank J.R., Winokur P.S. IEEE Trans. Nucl. Sci. 47(6):2000;2281.
2. Barnaby H.J., Schrimpf R.D., Pease R.L., Cole P., Turflinger T., Krieg J., Titus J., Emily D., Gehlhausen M., Witczak S.C., Maher M.C., Van Nort D. IEEE Trans. Nucl. Sci. 46(6):1999;1666.
3. Belyakov V.V., Pershenkov V.S., Shalnov A.V., Shvetzov-Shilovsky I.N. IEEE Trans. Nucl. Sci. 42(6):1995;1660.
4. Cazenave Ph., Fouillat P., Montagner X., Barnaby H., Schrimpf R.D., Bonora L., David J.P., Touboul A., Calvet M.C., Calvel P. IEEE Trans. Nucl. Sci. 45(6):1998;2577.
5. Dorfan D., Dubbs T., Grillo A.A., Ipe N.E., Mao S., Rowe W., Sadrozinski H.F.W., Seiden A., Spencer E., Stromberg S., Wichmann R. IEEE Trans. Nucl. Sci. 46(6):1999;1884.
6. Enlow E.W., Pease R.L., Combs W., Schrimpf R.D., Nowlin R.N. IEEE Trans. Nucl. Sci. 38(6):1991;1342.
7. Niu G., Banerjee G., Cressler J.D., Roldan J.M., Clark S.D., Ahlgren D.C. IEEE Trans. Nucl. Sci. 45(6):1998;2361.
8. Johnston A.H., Swift G.M., Miyahira T., Edmonds L.D. IEEE Trans. Nucl. Sci. 45(6):1998;2500.
9. Kosier S.L., Schrimpf R.D., Fleetwood D.M., DeLaus M.D., Pease R.L., Combs W.E. IEEE Trans. Nucl. Sci. 42(3):1995;436.
10. Kosier S.L., Schrimpf R.D., Nowlin R.N., Fleetwood D.M., DeLaus M., Peace R.L., Combs W.E., Wei A., Chai F. IEEE Trans. Nucl. Sci. 40(6):1993;1276.
11. Nowlin R.N., Enlow E.W., Schrimpf R.D., Combs W. IEEE Trans. Nucl. Sci. 39(6):1992;2026.
12. Nowlin R.N., Fleetwood D.M., Schrimpf R.D., Pease R.L., Combs W.E. IEEE Trans. Nucl. Sci. 40(6):1993;1686.
13. Pease R.L., Shaneyfelt M., Winokur P., Fleetwood D.M., Gorelick J., McClure S., Clark S., Cohn L., Alexander J. IEEE Trans. Nucl. Sci. 45(3):1998;1425.
14. Rax B.G., Johnston A.H., Miyahira T. IEEE Trans. Nucl. Sci. 46(6):1999;1660.
15. Schrimpf R.D. IEEE Trans. Nucl. Sci. 43(3):1996;787.
16. Loferski J.J. J. Appl. Phys. 29(1):1958;35.
17. Lauritznen P.O., Fitzgerald IEEE Trans. Nucl. Sci. 1964;39.
18. Reddi V.G.K. Solid State Electron. 10:1965;305.
19. McDonald B.A. IEEE Trans. Electron. Dev. ED-17(10):1970;871.
20. Lipman J.A., Bruncke W.C., Crosthwait D.L., Galloway K.F., Pease R.L. IEEE Trans. Nucl. Sci. NS-21:1974;383.
21. G.C. Messenger, M.S. Ash, Van Nostrand Reinhold, New York, 1986.
22. Nichols D.K., Price W.E., Gauthier M.K. IEEE Trans. Nucl. Sci. 29(6):1982;1970.
23. Wu A., Schrimpf R.D., Barnaby H.J., Fleetwood D.M., Pease R.L., Kosier S.L. IEEE Trans. Nucl. Sci. 44(6):1997;1914.
24. Wei A., Kosier S.L., Schrimpf R.D., Combs W.E., DeLaus M. IEEE Trans. Nucl. Sci. 42(5):1995;923.
25. Carriere T., Beaucour J., Gach A., Johlander B., Adams L. IEEE Trans. Nucl. Sci. 42(6):1995;1567.
26. Montagner X., Briand R., Fouillat P., Schrimpf R.D., Touboul A., Galloway K.F., Calvet M.C., Calvel P. IEEE Trans. Nucl. Sci. 45(3):1998;1431.
27. Montagner X., Fouillat P., Briand R., Schrimpf R.D., Touboul A., Galloway K.F., Calvet M.C., Calvel P. IEEE Trans. Nucl. Sci. 44(6):1997;1922.
28. Wei A., Kosier S.L., Scrimpf R.D., Fleetwood D.M., Combs W.E. Appl. Phys. Lett. 65(15):1994;1918.
29. Lang D.V. J. Appl. Phys. 45(7):1974;3023.
30. Ohyama H., Nemoto K. Phys. Stat. Sol. (a). 107:1988;429.
31. Cheryl J.D., Paul W.M., Edward A.B., Geoffrey P.S., Eligius A.W. IEEE Trans. Nucl. Sci. 35(6):1988;1208.
32. Balandin A., Wang K.L., Cai S., Li R., Vishwanathan C.R., Wang E.N., Wojtowicz M. J. Electron. Mater. 29:2000;297.
33. Kanjilal D., Chopra S., Narayanan M.M., Iyer I.S., Jha V., Joshi R., Datta S.K. Nucl. Instr. and Meth. A. 97:1993;328.
34. Bonfiglioli G., Ferro A., Mojoni A. J. Appl. Phys. 32:1961;2499.
35. Meftah A., Brisard F., Costantini J.M., Dooryhee E., Hage-Ali M., Hervieu M., Stoquert J.P., Studer F., Toulemonde Phys. Rev. B. 49(18):1994;12457.
36. Fleischer R.L. MRS Bull. 20:1995;17.
37. Fleischer R.L., Price P.B., Walker R.M. Nuclear Tracks in Solids - Principles and Applications. 1975;University of California Press.
38. Weeks R.A. J. Appl. Phys. 27:1956;1376.
39. Holzenkämpfer E., Richter F.W., Stuke J., Voget-Grote U. J. Non-Cryst. Solids. 32:1979;327.
40. Mangiagalli P., Levalois, Marie P. Nucl. Instr. and Meth. B. 146:1998;317.
41. Marry P., Bogdanski P., Toulemonde M., Spohr R., Vetter J. Nucl. Instr. and Meth. B. 62:1992;391.
42. Corbett J.W., Watkins G.D. Phy. Rev. 138(2A):1965;A555.
43. Godey S., Sauvage T., Ntsoenzok E., Erramli H., Beaufort M.F., Barbot J.F., Leroy B. J. Appl. Phys. 87(5):2000;2158.
44. Niclas K., Anders H., Lalita J., Bengt G.S. Nucl. Instr. and Meth. B. 127-128:1997;410.
45. Hallen A., Svensson B.G. Nucl. Instr. and Meth. B. 80-81:1993;106.
46. Sebania L., Salvatore C., Janet L.B., Kim H., David J.E. Nucl. Instr. and Meth. B. 148:1999;247.
47. Svensson B.G., Mohadjeri B., Hallen A., Svensson J.H., Corbett J.W. Phy. Rev. B. 43(3):1991;2292.
48. Varichenko V.S., Zaitsev A.M., Melnikov A.A., Fahrner W.R., Kasytchits N.M., Penina N.M., Erchak D.P. Nucl. Instr. and Meth. B. 94:1994;259.
49. Hallen A., Fenyo D., Sundqvist, Johnson, Svensson B.G. J. Appl. Phys. 70(6):1991;3025.
50. Kringhoj P., Williams J.S., Jagadish C. Appl. Phys. Lett. 65(17):1994;2208.
51. Lalita J., Svensson B.G., Jagadish C., Hallen A. Nucl. Instr. and Meth. B. 127-128:1997;69.
52. Coffa S., Privitera V., Priolo F., Libertino S., Mannino G. J. Appl. Phys. 81(4):1997;1639.
53. Giri P.K., Mohapatra Y.N. Appl. Phys. Lett. 71(12):1997;1682.
54. Giri P.K., Mohapatra Y.N. J. Appl. Phys. 84(4):1998;1901.
55. Giri P.K., Dhar S., Kulkarni V.N., Mohapatra Y.N. Nucl. Instr. and Meth. B. 111:1996;285.
56. Biersack J.P., Ziegler J.F., Littmark U. Stopping Power and Ranges of Ions in Matter. 1985;Pergamon.
57. Sze S.M. Physics of Semiconductor Devices. 2nd ed. 1993;Wiley Eastern Limited.
58. Gandhi S.K. Semiconductor Power Devices. 1977;John Wiley & Sons.