Electrically active defects due to end-of-ion-range damage in silicon irradiated with MeV Ar+ ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 111, Issue 3-4, 1996, Pages 285-289

  Giri, P K ^a   Dhar, S ^a   Kulkarni, V N ^a   Mohapatra, Y N ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ARGON; CAPACITANCE MEASUREMENT; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC RESISTANCE; ELECTRON ENERGY LEVELS; IRRADIATION; POINT DEFECTS; RADIATION DAMAGE; SEMICONDUCTING SILICON; VOLTAGE MEASUREMENT;

BARRIER ENERGY; ELECTRICALLY ACTIVE DEFECTS; END OF ION RANGE DAMAGE; MID GAP ACCEPTOR LEVELS; POST IMPLANTATION ANNEALING STEPS; SERIES RESISTANCE; THERMALLY STIMULATED CAPACITANCE; TIME ANALYZED TRANSIENT SPECTROSCOPY;

ION IMPLANTATION;

EID: 0030143097     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01569-8     Document Type: Article

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