Annealing studies of point defects in low dose MeV ion implanted silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 69-73

  Lalita, J ^a   Svensson, B G ^a   Jagadish, C ^b   Hallen A ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; CRYSTAL GROWTH FROM MELT; DEEP LEVEL TRANSIENT SPECTROSCOPY; HYDROGEN; ION BOMBARDMENT; ION IMPLANTATION; PHOSPHORUS; POINT DEFECTS; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY;

CONDUCTION BAND;

SILICON WAFERS;

EID: 0342608139     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)01109-3     Document Type: Article

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