Total dose effects on gate controlled lateral PNP bipolar junction transistors

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2577-2583

  Cazenave, Ph ^a   Fouillat P ^b   Montagner, X ^c   Barnahy, H ^d   Schrimpf, R D ^e   Bonora, L ^a   David, J P ^b   Touboul, A ^c   Calvet, M C ^d   Calvel, P ^e  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b VANDERBILT UNIVERSITY   (United States)

^c ONERA   (France)

^d AEROSPATIALE   (France)

^e THALES ALENIA SPACE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DOSIMETRY; GATES (TRANSISTOR); RADIATION HARDENING; SEMICONDUCTOR JUNCTIONS;

BIPOLAR JUNCTION TRANSISTORS (BJT);

BIPOLAR TRANSISTORS;

EID: 0032314295     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736500     Document Type: Article

References (11)

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