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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 247-251

Formation, evolution and annihilation of interstitial clusters in ion implanted Si

(5) Libertine, Sebania a Coffa, Salvatore a Benton, Janet L b Halliburton, Kim b Eaglesham, David J b

a CNR IMETEM (Italy)

b LUCENT TECHNOLOGIES (United States)

Author keywords

Annealing; Clustering; Deep levels; Defects

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DIFFUSION IN SOLIDS; DISSOCIATION; ENERGY GAP; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUPERSATURATION;

ION ENERGY; OSTWALD RIPENING;

SEMICONDUCTING SILICON;

EID: 0033513855 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/s0168-583x(98)00792-7 Document Type: Article

Times cited : (28)

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