Improved lifetime characteristics in heavy ion irradiated silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 410-413

  Keskitalo, Niclas ^a   Hallén, Anders ^a   Josyula, Lalita ^b   Svensson, Bengt G ^b  

^a UPPSALA UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY GAP; ION BOMBARDMENT; ION IMPLANTATION; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

COLLISION CASCADES; DIVACANCY CENTERS; HEAVY ION IRRADIATION; VACANCY OXYGEN COMPLEX;

SEMICONDUCTING SILICON;

EID: 0031547801     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00966-4     Document Type: Article

References (24)

1. B.J. Baliga, Modern Power Devices (Wiley-Interscience, New York, 1987).
2. A. Hallén, N. Keskitalo, F. Masszi and V. Nágl, J. Appl. Phys. 79 (1996) 3906.
3. H. Bleichner, P. Jonsson, N. Keskitalo and E. Nordlander, J. Appl. Phys. 79 (1996) 9142.
4. S.D. Brotherton and P. Bradley, J. Appl. Phys. 53 (1982) 5720.
5. A. Hallén and B.G. Svensson, Nucl. Instr. and Meth. B 80/81 (1993) 106.
6. B.G. Svensson, C. Jagadish, A. Hallén and J. Lalita, Nucl. Instr. Meth. B 106 (1995) 183.
7. J. Lalita, C. Jagadish and B.G. Svensson, Nucl. Instr. Meth. B 106 (1995) 237.
8. L.C. Kimerling, P. Blood and W.M. Gibson, Institute of Physics Conference Series (1978) p. 273.
9. D.V. Lang, J. Appl. Phys. 45 (1974) 3023.
10. N. Keskitalo, A. Hallén, F. Masszi and J. Olsson, Solid-State Electron. 39 (1996) 1087.
11. A. Hallén, D. Fenyö, B.U.R. Sundqvist, R.E. Johnson and B.G. Svensson, J. Appl. Phys. 70 (1991) 3025.
12. L.C. Kimerling, Institute of Physics Conference Series (1976) p. 221.
13. G. Ferenczi, P. Krispin and M. Somogyi, J. Appl. Phys. 54 (1983) 3902.
14. D. Pons, J. Appl. Phys. 55 (1984) 3644.
15. J.P. Biersack and L.G. Haggmark, Nucl. Instr. and Meth. 174 (1980) 257.
16. O. Engström and A. Alm, Solid-State Electron. 21 (1978) 1571.
17. J. Lalita, B.G. Svensson and C. Jagadish, Nucl. Instr. Meth. B 96 (1995) 210.
18. M.W. Hüppi, J. Appl. Phys. 68 (1990) 2702.
19. J. Lalita, A. Hallén, B.G. Svensson and C. Jagadish, these Proceedings (IBMM '96), Nucl. Instr. and Meth. B 127/128 (1997) 69.
20. N. Keskitalo and A. Hallén, Solid-State Electron. 37 (1994) 55.
21. W. Wondrak and A. Boos, Essderc (1987) p. 649.
22. S.K. Ghandhi, Semiconductor Power Devices (Wiley-Interscience, New York, 1977).
23. K. Irmscher, H. Klose and K. Maass, J. Phys. C: Solid State Phys. 17 (1984) 6317.
24. B.G. Svensson, A. Hallén and B.U.R. Sundqvist, Materials Science and Engineering B4 (1989) 285.