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Volumn 46, Issue 6 PART 2, 1999, Pages 1884-1890

Measurement of dose rate dependence of radiation induced damage to the current gain in bipolar transistors

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; DOSIMETRY; ELECTRONIC EQUIPMENT TESTING; GAMMA RAYS; IRRADIATION; RADIATION DAMAGE;

EID: 0033332320     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819246     Document Type: Article
Times cited : (7)

References (16)
  • 1
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  • 4
    • 0026390651 scopus 로고
    • Response of Advanced Bipolar Processes to Ionizing Radiation
    • E. W. Enlow et al., "Response of Advanced Bipolar Processes to Ionizing Radiation," IEEE Trans. Nucl. Sci., vol. 38, pp. 1242, 1991.
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    • Enlow, E.W.1
  • 5
    • 0027812038 scopus 로고
    • Hardness-Assurance and Testing Issues for Bipolar/BiCMOS Devices
    • R. N. Nowlin et al., "Hardness-Assurance and Testing Issues for Bipolar/BiCMOS Devices," IEEE Trans. Nucl. Sci., vol. 40, pp. 1686, 1993.
    • (1993) IEEE Trans. Nucl. Sci. , vol.40 , pp. 1686
    • Nowlin, R.N.1
  • 6
    • 0029521843 scopus 로고
    • Enhanced Damage in Linear Bipolar Integrated Circuits at Low Dose Rate
    • A. H. Johnston et al., "Enhanced Damage in Linear Bipolar Integrated Circuits at Low Dose Rate," IEEE Trans. Nucl. Sci., vol. 42, pp. 1650, 1995.
    • (1995) IEEE Trans. Nucl. Sci. , vol.42 , pp. 1650
    • Johnston, A.H.1
  • 7
    • 0030373995 scopus 로고    scopus 로고
    • Modeling Ionizing Radiation Induced Gain Degradation of the Lateral PNP Bipolar Junction Transistor
    • D. M. Schmidt et al., "Modeling Ionizing Radiation Induced Gain Degradation of the Lateral PNP Bipolar Junction Transistor," IEEE Trans. Nucl. Sci., vol. 43, pp. 3032, 1996.
    • (1996) IEEE Trans. Nucl. Sci. , vol.43 , pp. 3032
    • Schmidt, D.M.1
  • 8
    • 0030359035 scopus 로고    scopus 로고
    • Analysis of Bipolar Linear Circuit Response Mechanisms for High and Low Dose Rate Total Dose Irradiations
    • H. Barneby et al., "Analysis of Bipolar Linear Circuit Response Mechanisms for High and Low Dose Rate Total Dose Irradiations," IEEE Trans. Nucl. Sci., vol. 43, pp. 3040, 1996.
    • (1996) IEEE Trans. Nucl. Sci. , vol.43 , pp. 3040
    • Barneby, H.1
  • 9
    • 0030372722 scopus 로고    scopus 로고
    • Enhanced Damage in Bipolar Devices at Low Dose Effects at Very Low Dose Rates
    • A. H. Johnston et al., "Enhanced Damage in Bipolar Devices at Low Dose Effects at Very Low Dose Rates," IEEE Trans. Nucl. Sci., vol. 43, pp. 3049, 1996.
    • (1996) IEEE Trans. Nucl. Sci. , vol.43 , pp. 3049
    • Johnston, A.H.1
  • 10
    • 0028693849 scopus 로고
    • Dependence of Total Dose Response of Bipolar Linear Microcircuits on Applied Dose Rate
    • S. McClure et al., "Dependence of Total Dose Response of Bipolar Linear Microcircuits on Applied Dose Rate," IEEE Trans. Nucl. Sci., vol. 41, pp. 2544, 1994.
    • (1994) IEEE Trans. Nucl. Sci. , vol.41 , pp. 2544
    • McClure, S.1
  • 11
    • 0023542207 scopus 로고
    • A Reevaluation of worst-case Postirradiation Response for hardened MOS Transistors
    • D. W. Fleetwood et al., "A Reevaluation of worst-case Postirradiation Response for hardened MOS Transistors," IEEE Trans. Nucl. Sci., vol. 34, pp. 1178, 1987.
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    • Fleetwood, D.W.1
  • 13
    • 33747805450 scopus 로고    scopus 로고
    • Ref. 1 and ATLAS-SCT Project Specification, Project Name: CAFE-M, Version 3.01
    • Ref. 1 and ATLAS-SCT Project Specification, Project Name: CAFE-M, Version 3.01.
  • 15
    • 33747771923 scopus 로고    scopus 로고
    • Opti-chromic dosimeters of type FWT 70-40M, Batch 0-1 from Far West Technology Inc., 330-D S. Kellogg, Goleta, CA 93017, USA
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  • 16
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    • High Level Dosimetry at SLAC
    • Nov
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.