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Journal of Crystal Growth

Volumn 223, Issue 1-2, 2001, Pages 43-54

Numerical analysis of InGaN dot-like structure and compositional fluctuation caused by phase separation: Comparison with experiment

(2) Okumura, Toshiyuki a Akagi, Yoshiro a

a SHARP CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; LIGHT EMITTING DIODES; NITRIDES; NUMERICAL ANALYSIS; PHASE SEPARATION; SEMICONDUCTOR LASERS;

INDIUM GALLIUM NITRIDES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0034825465 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00993-3 Document Type: Article

Times cited : (11)

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