-
1
-
-
84862036625
-
-
Atheros Communications' AR5001; see http://www.atheros.com/.
-
-
-
-
2
-
-
84862031579
-
-
Silicon Laboratories' AERO; see http://www.siliconlaboratories.com/.
-
-
-
-
3
-
-
84862036624
-
-
Broadcom's BCM8150; see http://www.broadcom.com/.
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-
-
-
4
-
-
0033325117
-
Device Issues in the Integration of Analog/RF Functions in Deep Submicron Digital CMOS
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D. Buss, "Device Issues in the Integration of Analog/RF Functions in Deep Submicron Digital CMOS," IEDM Tech. Digest, pp. 423-426 (1999).
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(1999)
IEDM Tech. Digest
, pp. 423-426
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-
Buss, D.1
-
5
-
-
0036508380
-
SOI Technology for the GHz Era
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March/May
-
5. G. G. Shahidi, "SOI Technology for the GHz Era," IBM J. Res. & Dev. 46, No. 2/3, 121-131 (March/May 2002); see http://researchweb.watson.ibm.com/journal/rd/462/shahidi.pdf.
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(2002)
IBM J. Res. & Dev.
, vol.46
, Issue.2-3
, pp. 121-131
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Shahidi, G.G.1
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6
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0035716504
-
A 0.13 μm High-Performance SOI Logic Technology with Embedded DRAM for System-on-a-Chip Application
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H. Ho, M. D. Steigerwalt, B. L. Walsh, T. L. Doney, D. Wildrick, P. A. McFarland, J. Benedict, K. A. Bard, D. Pendleton, J. D. Lee, S. L. Maurer, B. Corrow, and D. K. Sadana, "A 0.13 μm High-Performance SOI Logic Technology with Embedded DRAM for System-on-a-Chip Application," IEDM Tech. Digest, pp. 503-506 (2001).
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(2001)
IEDM Tech. Digest
, pp. 503-506
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-
Ho, H.1
Steigerwalt, M.D.2
Walsh, B.L.3
Doney, T.L.4
Wildrick, D.5
McFarland, P.A.6
Benedict, J.7
Bard, K.A.8
Pendleton, D.9
Lee, J.D.10
Maurer, S.L.11
Corrow, B.12
Sadana, D.K.13
-
7
-
-
0036045977
-
Fully-Depleted-Collector Polysilicon-Emitter SiGe-Base Vertical Bipolar Transistor on SOI
-
J. Cai, A. Ajmera, C. Ouyang, P. Oldiges, M. Steigerwalt, K. Stein, K. Jenkins, G. Shahidi, and T. Ning, "Fully-Depleted-Collector Polysilicon-Emitter SiGe-Base Vertical Bipolar Transistor on SOI," Proceedings of the Symposium on VLSI Technology, Digest of Technical Papers, 2002, pp. 172-173.
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(2002)
Proceedings of the Symposium on VLSI Technology, Digest of Technical Papers
, pp. 172-173
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-
Cai, J.1
Ajmera, A.2
Ouyang, C.3
Oldiges, P.4
Steigerwalt, M.5
Stein, K.6
Jenkins, K.7
Shahidi, G.8
Ning, T.9
-
8
-
-
0033666629
-
Cool Low Power 1 GHz Multiport Register File and Dynamic Latch in 1.8 V, 0.25 μm SOI and Bulk Technology
-
R. V. Joshi, W. Hwang, S. C. Wilson, and C. T. Chuang, "Cool Low Power 1 GHz Multiport Register File and Dynamic Latch in 1.8 V, 0.25 μm SOI and Bulk Technology," Proceedings of the International Symposium on Low Power Electronics and Design (ISLPED'00), 2000, pp. 203-206.
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(2000)
Proceedings of the International Symposium on Low Power Electronics and Design (ISLPED'00)
, pp. 203-206
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-
Joshi, R.V.1
Hwang, W.2
Wilson, S.C.3
Chuang, C.T.4
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10
-
-
0041947475
-
Suitability of Scaled SOI CMOS for High-Frequency Analog Circuits
-
N. Zamdmer, J.-O. Plouchart, J. Kim, L.-H. Lu, S. Narasimha, P. A. O'Neil, A. Ray, M. Sherony, and L. Wagner, "Suitability of Scaled SOI CMOS for High-Frequency Analog Circuits," Proceedings of the European Solid-State Device Research Conference, 2002, p. D26.2.
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(2002)
Proceedings of the European Solid-state Device Research Conference
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Zamdmer, N.1
Plouchart, J.-O.2
Kim, J.3
Lu, L.-H.4
Narasimha, S.5
O'Neil, P.A.6
Ray, A.7
Sherony, M.8
Wagner, L.9
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11
-
-
0016116644
-
Design of Ion-Implanted MOSFET's with Very Small Physical Dimensions
-
R. H. Dennard, F. H. Gaensslen, V. L. Rideout, E. Bassous, and A. R. LeBlanc, "Design of Ion-Implanted MOSFET's with Very Small Physical Dimensions," IEEE J. Solid-State Circuits 9, No. 5, 256-268 (1974).
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(1974)
IEEE J. Solid-state Circuits
, vol.9
, Issue.5
, pp. 256-268
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Dennard, R.H.1
Gaensslen, F.H.2
Rideout, V.L.3
Bassous, E.4
LeBlanc, A.R.5
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12
-
-
0035714324
-
A High Performance 0.13 μm SOI CMOS Technology with a 70 nm Silicon Film and with a Second Generation Low-k Cu BEOL
-
presented at the 2001 Electron Devices Meeting
-
J. W. Sleight, P. R. Varekamp, N. Lustig, J. Adkisson, A. Allen, O. Bula, X. Chen, T. Chou, W. Chu, J. Fitzsimmons, A. Gabor, S. Gates, P. Jamison, M. Khare, L. Lai, J. Lee, S. Narasimha, J. Ellis-Monaghan, K. Peterson, S. Rauch, S. Shukla, P. Smeys, T.-C. Su, J. Quinlan, A. Vayshenker, B. Ward, S. Womack, E. Barth, G. Biery, C. Davis, R. Ferguson, R. Goldblatt, E. Leobandung, J. Welser, I. Yang, and P. Agnello, "A High Performance 0.13 μm SOI CMOS Technology with a 70 nm Silicon Film and with a Second Generation Low-k Cu BEOL," presented at the 2001 Electron Devices Meeting; IEDM Tech. Digest, pp. 245-248 (2001).
-
(2001)
IEDM Tech. Digest
, pp. 245-248
-
-
Sleight, J.W.1
Varekamp, P.R.2
Lustig, N.3
Adkisson, J.4
Allen, A.5
Bula, O.6
Chen, X.7
Chou, T.8
Chu, W.9
Fitzsimmons, J.10
Gabor, A.11
Gates, S.12
Jamison, P.13
Khare, M.14
Lai, L.15
Lee, J.16
Narasimha, S.17
Ellis-Monaghan, J.18
Peterson, K.19
Rauch, S.20
Shukla, S.21
Smeys, P.22
Su, T.-C.23
Quinlan, J.24
Vayshenker, A.25
Ward, B.26
Womack, S.27
Barth, E.28
Biery, G.29
Davis, C.30
Ferguson, R.31
Goldblatt, R.32
Leobandung, E.33
Welser, J.34
Yang, I.35
Agnello, P.36
more..
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13
-
-
0034454110
-
A 140 GHz ft and 60 GHz fmax DTMOS Integrated with High-Performance SOI Logic Technology
-
presented at the 2000 Electron Devices Meeting
-
Y. Momiyama, T. Hirose, H. Kurata, K. Goto, Y. Watanabe, and T. Sugii, "A 140 GHz ft and 60 GHz fmax DTMOS Integrated with High-Performance SOI Logic Technology," presented at the 2000 Electron Devices Meeting; IEDM Tech. Digest International, pp. 451-454 (2000).
-
(2000)
IEDM Tech. Digest International
, pp. 451-454
-
-
Momiyama, Y.1
Hirose, T.2
Kurata, H.3
Goto, K.4
Watanabe, Y.5
Sugii, T.6
-
14
-
-
0035715830
-
A Record High 150 GHz fmax Realized at 0.18 μm Gate Length in an Industrial RF-CMOS Technology
-
presented at the 2001 Electron Devices Meeting
-
L. F. Tiemeijer, H. M. J. Boots, R. J. Havens, A. J. Scholten, P. H. W. de Vreede, P. H. Woerlee, A. Heringa, and D. B. M. Klaassen, "A Record High 150 GHz fmax Realized at 0.18 μm Gate Length in an Industrial RF-CMOS Technology," presented at the 2001 Electron Devices Meeting; IEDM Tech. Digest International, pp. 10.4.1-10.4.4 (2001).
-
(2001)
IEDM Tech. Digest International
, pp. 1041-1044
-
-
Tiemeijer, L.F.1
Boots, H.M.J.2
Havens, R.J.3
Scholten, A.J.4
De Vreede, P.H.W.5
Woerlee, P.H.6
Heringa, A.7
Klaassen, D.B.M.8
-
15
-
-
0035367153
-
Cutoff Frequency and Propagation Delay Time of 1.5-nm Gate Oxide CMOS
-
June
-
H. S. Momose, E. Morifuji, T. Yoshitomi, T. Ohguro, M. Saito, and H. Iwai, "Cutoff Frequency and Propagation Delay Time of 1.5-nm Gate Oxide CMOS," IEEE Trans. Electron Devices 48, No. 6, 1165-1174 (June 2001).
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(2001)
IEEE Trans. Electron Devices
, vol.48
, Issue.6
, pp. 1165-1174
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-
Momose, H.S.1
Morifuji, E.2
Yoshitomi, T.3
Ohguro, T.4
Saito, M.5
Iwai, H.6
-
16
-
-
0034790451
-
A 0.13-μm SOI CMOS Technology for Low-Power Digital and RF Applications
-
N. Zamdmer, A. Ray, J.-O. Plouchart, L. Wagner, N. Fong, K. A. Jenkins, W. Jin, P. Smeys, I. Yang, G. Shahidi, and F. Assaderghi, "A 0.13-μm SOI CMOS Technology for Low-Power Digital and RF Applications," Proceedings of the Symposium on VLSI Technology, Digest of Technical Papers, 2001, pp. 85-86.
-
(2001)
Proceedings of the Symposium on VLSI Technology, Digest of Technical Papers
, pp. 85-86
-
-
Zamdmer, N.1
Ray, A.2
Plouchart, J.-O.3
Wagner, L.4
Fong, N.5
Jenkins, K.A.6
Jin, W.7
Smeys, P.8
Yang, I.9
Shahidi, G.10
Assaderghi, F.11
-
17
-
-
0036116463
-
A 0.9 V to 1.95 V Dynamic Voltage-Scalable and Frequency-Scalable 32 b PowerPC Processor
-
K. Nowka, G. Carpenter, E. MacDonald, H. C. Ngo, B. Brock, K. Ishii, T. Nguyen, and J. Burns, "A 0.9 V to 1.95 V Dynamic Voltage-Scalable and Frequency-Scalable 32 b PowerPC Processor," Proceedings of the IEEE International Solid-State Circuits Conference (ISSCC'02), Digest of Technical Papers, 2002, pp. 340-341.
-
(2002)
Proceedings of the IEEE International Solid-state Circuits Conference (ISSCC'02), Digest of Technical Papers
, pp. 340-341
-
-
Nowka, K.1
Carpenter, G.2
Macdonald, E.3
Ngo, H.C.4
Brock, B.5
Ishii, K.6
Nguyen, T.7
Burns, J.8
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18
-
-
84862036628
-
-
395 Page Mill Rd., P.O. Box 10395, Palo Alto, CA 94303
-
Agilent Headquarters, 395 Page Mill Rd., P.O. Box 10395, Palo Alto, CA 94303; see http://www.agilent.com/view/rf/.
-
-
-
-
19
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-
0034798979
-
A Study of Analog Characteristics of CMOS with Heavily Nitrided NO Oxynitrides
-
T. Ohguro, T. Nagano, M. Fujiwara, M. Takayanagi, T. Shimizu, H. S. Momose, S. Nakamura, and Y. Toyoshima, "A Study of Analog Characteristics of CMOS with Heavily Nitrided NO Oxynitrides," Proceedings of the Symposium on VLSI Technology, Digest of Technical Papers, 2001, pp. 91-92.
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(2001)
Proceedings of the Symposium on VLSI Technology, Digest of Technical Papers
, pp. 91-92
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-
Ohguro, T.1
Nagano, T.2
Fujiwara, M.3
Takayanagi, M.4
Shimizu, T.5
Momose, H.S.6
Nakamura, S.7
Toyoshima, Y.8
-
20
-
-
0034835413
-
Driving CMOS into the Wireless Communications Arena with Technology Scaling
-
K. W. J. Chew, S.-F. S. Chu, and C. C. C. Leung, "Driving CMOS into the Wireless Communications Arena with Technology Scaling," Proceedings of the IEEE Conference on Custom Integrated Circuits (CICC'01), 2001, pp. 571-574.
-
(2001)
Proceedings of the IEEE Conference on Custom Integrated Circuits (CICC'01)
, pp. 571-574
-
-
Chew, K.W.J.1
Chu, S.-F.S.2
Leung, C.C.C.3
-
21
-
-
0033750499
-
Physical Noise Modeling of SOI MOSFETs with Analysis of the Lorentzian Component in the Low-Frequency Noise Spectrum
-
June
-
G. O. Workman and J. G. Fossum, "Physical Noise Modeling of SOI MOSFETs with Analysis of the Lorentzian Component in the Low-Frequency Noise Spectrum," IEEE Trans. Electron Devices 47, No. 6, 1192-1201 (June 2000).
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(2000)
IEEE Trans. Electron Devices
, vol.47
, Issue.6
, pp. 1192-1201
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Workman, G.O.1
Fossum, J.G.2
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22
-
-
0032306668
-
RF Circuit Design Aspects of Spiral Inductors on Silicon
-
December
-
J. N. Burghartz, D. C. Edelstein, M. Soyuer, H. A. Ainspan, and K. A. Jenkins, "RF Circuit Design Aspects of Spiral Inductors on Silicon," IEEE J. Solid-State Circuits 33, No. 12, 2028-2034 (December 1998).
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(1998)
IEEE J. Solid-state Circuits
, vol.33
, Issue.12
, pp. 2028-2034
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Burghartz, J.N.1
Edelstein, D.C.2
Soyuer, M.3
Ainspan, H.A.4
Jenkins, K.A.5
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23
-
-
0141761455
-
3-Dimensional Vertical Parallel Plate Capacitors in an SOI CMOS Technology for Integrated RF Circuits
-
June
-
J. Kim, J.-O. Plouchart, N. Zamdmer, M. Sherony, L.-H. Lu, Y. Tan, M. Yoon, K. A. Jenkins, M. Kumar, A. Ray, and L. Wagner, "3-Dimensional Vertical Parallel Plate Capacitors in an SOI CMOS Technology for Integrated RF Circuits," Proceedings of the IEEE Symposium on VLSI Circuits, June 2003, pp. 29-32.
-
(2003)
Proceedings of the IEEE Symposium on VLSI Circuits
, pp. 29-32
-
-
Kim, J.1
Plouchart, J.-O.2
Zamdmer, N.3
Sherony, M.4
Lu, L.-H.5
Tan, Y.6
Yoon, M.7
Jenkins, K.A.8
Kumar, M.9
Ray, A.10
Wagner, L.11
-
24
-
-
0043162165
-
High-Performance Three-Dimensional On-Chip Inductors in SOI CMOS Technology for Monolithic RF Circuit Applications
-
June
-
J. Kim, J.-O. Plouchart, N. Zamdmer, N. Fong, L.-H. Lu, Y. Tan, K. A. Jenkins, M. Sherony, R. Groves, M. Kumar, and A. Ray, "High-Performance Three-Dimensional On-Chip Inductors in SOI CMOS Technology for Monolithic RF Circuit Applications," Proceedings of the IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Technical Papers, June 2003, pp. 591-594.
-
(2003)
Proceedings of the IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Technical Papers
, pp. 591-594
-
-
Kim, J.1
Plouchart, J.-O.2
Zamdmer, N.3
Fong, N.4
Lu, L.-H.5
Tan, Y.6
Jenkins, K.A.7
Sherony, M.8
Groves, R.9
Kumar, M.10
Ray, A.11
-
25
-
-
0036313134
-
Advanced Passive Devices for Enhanced Integrated RF Circuit Performance
-
June
-
D. Coolbaugh, E. Eshun, R. Groves, D. Harame, J. Johnson, M. Hammad, Z. He, V. Ramachandran, K. Stein, S. St.Onge, S. Subbanna, D. Wang, R. Volant, X. Wang, and K. Watson, "Advanced Passive Devices for Enhanced Integrated RF Circuit Performance," Proceedings of the IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Technical Papers, June 2002, pp. 341-344.
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(2002)
Proceedings of the IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Technical Papers
, pp. 341-344
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-
Coolbaugh, D.1
Eshun, E.2
Groves, R.3
Harame, D.4
Johnson, J.5
Hammad, M.6
He, Z.7
Ramachandran, V.8
Stein, K.9
Onge, S.St.10
Subbanna, S.11
Wang, D.12
Volant, R.13
Wang, X.14
Watson, K.15
-
26
-
-
0036309535
-
Super Compact RFIC Inductors in 0.18μm CMOS with Copper Interconnects
-
June
-
H. Feng, G. Jelodin, K. Gong, R. Zhan, Q. Wu, C. Chen, and A. Wang, "Super Compact RFIC Inductors in 0.18μm CMOS with Copper Interconnects," Proceedings of the IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Technical Papers, June 2002, pp. 443-446.
-
(2002)
Proceedings of the IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Technical Papers
, pp. 443-446
-
-
Feng, H.1
Jelodin, G.2
Gong, K.3
Zhan, R.4
Wu, Q.5
Chen, C.6
Wang, A.7
-
27
-
-
0031249261
-
Spiral Inductors and Transmission Lines in Silicon Technology Using Copper-Damascene Interconnects and Low-Loss Substrates
-
October
-
J. N. Burghartz, D. C. Edelstein, K. A. Jenkins, and Y. H. Kwark, "Spiral Inductors and Transmission Lines in Silicon Technology Using Copper-Damascene Interconnects and Low-Loss Substrates," IEEE Trans. Microwave Theory & Techniques 45, No. 10, 1961-1968 (October 1997).
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(1997)
IEEE Trans. Microwave Theory & Techniques
, vol.45
, Issue.10
, pp. 1961-1968
-
-
Burghartz, J.N.1
Edelstein, D.C.2
Jenkins, K.A.3
Kwark, Y.H.4
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28
-
-
0036686741
-
High-Q Factor Three-Dimensional Inductors
-
August
-
B. Piernas, K. Nishikawa, K. Kamogawa, T. Nakagawa, and K. Araki, "High-Q Factor Three-Dimensional Inductors," IEEE Trans. Microwave Theory & Techniques 50, No. 8, 1942-1949 (August 2002).
-
(2002)
IEEE Trans. Microwave Theory & Techniques
, vol.50
, Issue.8
, pp. 1942-1949
-
-
Piernas, B.1
Nishikawa, K.2
Kamogawa, K.3
Nakagawa, T.4
Araki, K.5
-
29
-
-
0036317309
-
High-Q Copper Inductors on Standard Silicon Substrate with a Low-K BCB Dielectric Layer
-
June
-
X. Huo, K. J. Chen, and P. C. H. Chan, "High-Q Copper Inductors on Standard Silicon Substrate with a Low-K BCB Dielectric Layer," Proceedings of the IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Technical Papers, June 2002, pp. 403-406.
-
(2002)
Proceedings of the IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Technical Papers
, pp. 403-406
-
-
Huo, X.1
Chen, K.J.2
Chan, P.C.H.3
-
30
-
-
0036589409
-
Development of RF/Microwave On-Chip Inductors Using an Organic Micromachining Process
-
May
-
R. Ramachandran and A.-V. H. Pham, "Development of RF/Microwave On-Chip Inductors Using an Organic Micromachining Process," IEEE Trans. Adv. Packaging 25, No. 2, 244-247 (May 2002).
-
(2002)
IEEE Trans. Adv. Packaging
, vol.25
, Issue.2
, pp. 244-247
-
-
Ramachandran, R.1
Pham, A.-V.H.2
-
31
-
-
0036713966
-
Silicon-Based High-Q Inductors Incorporating Electroplated Copper and Low-K BCB Dielectric
-
September
-
X. Huo, K. J. Chen, and P. C. H. Chan, "Silicon-Based High-Q Inductors Incorporating Electroplated Copper and Low-K BCB Dielectric," IEEE Electron Device Lett. 23, No. 9, 520-522 (September 2002).
-
(2002)
IEEE Electron Device Lett.
, vol.23
, Issue.9
, pp. 520-522
-
-
Huo, X.1
Chen, K.J.2
Chan, P.C.H.3
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33
-
-
0036117642
-
A 1 V 51 GHz Fully-Integrated VCO in 0.12 μm CMOS
-
M. Tiebout, H.-D. Wohlmuth, and W. Simburger, "A 1 V 51 GHz Fully-Integrated VCO in 0.12 μm CMOS," Proceedings of the IEEE International Solid-State Circuits Conference (ISSCC'02), Digest of Technical Papers, 2002, pp. 300-468.
-
(2002)
Proceedings of the IEEE International Solid-state Circuits Conference (ISSCC'02), Digest of Technical Papers
, pp. 300-468
-
-
Tiebout, M.1
Wohlmuth, H.-D.2
Simburger, W.3
-
34
-
-
0242695780
-
A 40 GHz VCO with 9 to 15% Tuning Range in 0.13 μm SOI CMOS
-
N. Fong, J.-O. Plouchart, N. Zamdmer, D. Liu, L. Wagner, P. Garry, and G. Tarr, "A 40 GHz VCO with 9 to 15% Tuning Range in 0.13 μm SOI CMOS," Proceedings of the Symposium on VLSI Circuits, Digest of Technical Papers, 2002, pp. 186-189.
-
(2002)
Proceedings of the Symposium on VLSI Circuits, Digest of Technical Papers
, pp. 186-189
-
-
Fong, N.1
Plouchart, J.-O.2
Zamdmer, N.3
Liu, D.4
Wagner, L.5
Garry, P.6
Tarr, G.7
-
35
-
-
0041589141
-
A 33 GHZ 2:1 Static Frequency Divider in 0.12-μ SOI CMOS Operable at 2.7mW
-
June
-
J.-O. Plouchart, J. Kim, H. Recoules, N. Zamdmer, Y. Tan, M. Sherony, A. Ray, and L. Wagner, "A 33 GHZ 2:1 Static Frequency Divider in 0.12-μ SOI CMOS Operable at 2.7mW," Proceedings of the IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Technical Papers, June 2003, pp. 329-332.
-
(2003)
Proceedings of the IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Technical Papers
, pp. 329-332
-
-
Plouchart, J.-O.1
Kim, J.2
Recoules, H.3
Zamdmer, N.4
Tan, Y.5
Sherony, M.6
Ray, A.7
Wagner, L.8
-
36
-
-
0036316893
-
A High Sensitivity Static 2:1 Frequency Divider Up to 19 GHz in 120 nm CMOS
-
H.-D. Wohlmuth, D. Kehrer, and W. Simburger, "A High Sensitivity Static 2:1 Frequency Divider Up to 19 GHz in 120 nm CMOS," Proceedings of the IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Technical Papers, 2002, pp. 231-234.
-
(2002)
Proceedings of the IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Technical Papers
, pp. 231-234
-
-
Wohlmuth, H.-D.1
Kehrer, D.2
Simburger, W.3
-
37
-
-
0035715832
-
High-Speed and Low-Power InAlAs/InGaAs Heterojunction Bipolar Transistors for Dense Ultra High Speed Digital Applications
-
presented at the IEEE International Electron Devices Meeting
-
A. Sokolich, S. Thomas III, and C. H. Fields, "High-Speed and Low-Power InAlAs/InGaAs Heterojunction Bipolar Transistors for Dense Ultra High Speed Digital Applications," presented at the IEEE International Electron Devices Meeting; IEDM Tech. Digest, pp. 35.5.1-35.5.4 (2001).
-
(2001)
IEDM Tech. Digest
, pp. 3551-3554
-
-
Sokolich, A.1
Thomas III, S.2
Fields, C.H.3
-
38
-
-
0035446341
-
A Low-Power 72.8-GHz Static Frequency Divider in AlInAs/InGaAs HBT Technology
-
September
-
M. Sokolich, C. H. Fields, S. Thomas III, B. Shi, Y. K. Boegeman, R. Martinez, A. R. Kramer, and M. Madhav, "A Low-Power 72.8-GHz Static Frequency Divider in AlInAs/InGaAs HBT Technology," IEEE J. Solid-State Circuits 36, No. 9, 1328-1334 (September 2001).
-
(2001)
IEEE J. Solid-state Circuits
, vol.36
, Issue.9
, pp. 1328-1334
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