A power-efficient 33 GHz 2:1 static frequency divider in 0.12-μm SOI CMOS

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2003, Pages 329-332

  Plouchart, Jean Olivier ^a   Kim, Jonghae ^a   Recoules, Hector ^b   Zamdmer, Noah ^a   Tan, Yue ^a   Sherony, Melanie ^a   Ray, Asit ^a   Wagner, Lawrence ^a  

^a IBM RESEARCH   (United States)

^b IBM   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CIRCUIT OSCILLATIONS; CMOS INTEGRATED CIRCUITS; POWER SUPPLY CIRCUITS; VOLTAGE CONTROL;

VOLTAGE SUPPLY;

FREQUENCY DIVIDING CIRCUITS;

EID: 0041589141     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. Krishnan, S.; Griffith, Z.; Urteaga, M.; Wei, Y.; Scott, D.; Dahlstrom, M.; Parthasarathy, N.; Rodwell, M., "87 GHz static frequency divider in an InP-based mesa DHBT technology," GaAs IC Symposium, 2002. 24th Annual Technical Digest, 2002, Page(s): 294-296
2. Hans-Dieter Wohlmuth, Daniel Kehrer, Werner Simbuger, "A High Sensitivity Static 2:1 Frequency Divider up to 19 GHz in 120 nm CMOS," IEEE RFIC2002, Proceedings, pp. 231-234, June 2002
3. N. Zamdmer, A. Ray, J.-O. Plouchart, L. Wagner, N. Fong, K. A. Jenkins, W. Jin, P. Smeys, I. Yang, G. Shahidi, F. Assaeraghi, "A 0.13-lm SOI CMOS technology for low-power digital and RF applications," VLSI Tech. Symp., 2001,. Page(s). 85-86.
4. G. Shahidi "SOI technology for the GHz era", http://researchweb.watson.ibm.com/journal/rd/462/shahidi.pdf.
5. N.Zamdmer, J.-O. Plouchart, J. Kim, L-H. Lu, S. Narasimha, P. A. O'Neil, A. Ray, M. Sherony, L. Wagner, "Suitability of Scaled SOI CMOS for High-frequency Analog Circuits," 2002 European Solid-State Device Research Conference.
6. Sokolich, A.; Thomas, S., III; Fields, C.H., "High-speed and low-power InAlAs/InGaAs heterojunction bipolar transistors for dense ultra high speed digital applications," Electron Devices Meeting, 2001, IEDM Technical Digest. International, 2001, Page(s): 35.5.1 -35.5.4.
7. Raskin, J.-P.; Viviani, A.; Flandre, D.; Colinge, J.-P, "Substrate crosstalk reduction using SOI technology" Electron Devices, IEEE Transactions on, Volume: 44 Issue: 12, Dec. 1997, Page(s): 2252-2261.
8. Sokolich, M.; Fields, C.H.; Thomas, S., III.; Binqiang Shi; Boegeman, Y.K.; Martinez, R.; Kramer, A.R.; Madhav, M., "A low-power 72.8-GHz static frequency divider in AlInAs/InGaAs HBT technology," IEEE Journal of Solid-State Circuits, Volume: 36 Issue: 9, Sept. 2001, pp. 1328-1334.
9. Vaucher, C.S.; Apostolidou, M., "A low-power 20 GHz static frequency divider with programmable input sensitivity," 2002 IEEE RFIC Symposium, pp. 235-238.
10. Washio, K.; Ohue, E.; Oda, K.; Hayami, R.; Tanabe, M.; Shimamoto, H; "Optimization of characteristics related to the emitter-base junction in self-aligned SEG SiGe HBTs and their application in 72-GHz-static/ 92-GHz-dynamic frequency dividers," Electron Devices, IEEE Transactions on, Volume: 49 Issue: 10, Oct. 2002, Page(s): 1755-1760.
11. Hayami, R; Washio, K; "40 GHz 7.9 mW low-power frequency divider IC using self-aligned selective-epitaxial-growth SiGe HBTs," Electronics Letters, Volume: 38 Issue: 14, 4 July 2002, Page(s): 707-709.