A study of analog characteristics of CMOS with heavily nitrided NO oxynitrides

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue TECHNOLOGY SYMP., 2001, Pages 91-92

  Ohguro, T ^a   Nagano, T ^a   Fujiwara, M ^a   Takayanagi, M ^a   Shimizu, T ^a   Momose, H S ^a   Nakamura, S ^a   Toyoshima, Y ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOSFET DEVICES; NITRIDING; SPURIOUS SIGNAL NOISE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACE STATE DENSITY;

CMOS INTEGRATED CIRCUITS;

EID: 0034798979     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)