High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2002, Pages 403-406

  Huo, Xiao ^a   Chen, Kevin J ^a   Chan, Philip C H ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COPPER; DIELECTRIC MATERIALS; FABRICATION; Q FACTOR MEASUREMENT; SEMICONDUCTING SILICON; SUBSTRATES;

DIELECTRIC LAYERS;

ELECTRIC INDUCTORS;

EID: 0036317309     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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7. 1999 International Electron Devices Meeting
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9. 1998 Symposium on VLSI Technology Digest of Technical Papers
10. 2000 IEEE Radio and Wireless Conference
11. IEEE Transactions on Electron Devices
12. IEEE Journal of Solid-State Circuits