High-speed and low-power InAlAs/InGaAs heterojunction bipolar transistors for dense ultra high speed digital applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 780-783

  Sokolich, M ^a   Thomas III, S ^a   Fields, C H ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ENERGY DISSIPATION; FLIP FLOP CIRCUITS; FREQUENCIES; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; LOGIC CIRCUITS; LOGIC GATES; OPTIMIZATION; SEMICONDUCTING INDIUM COMPOUNDS;

CURRENT MODE LOGIC; CUT OFF FREQUENCY; STATIC DIVIDERS; TOGGLE RATE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035715832     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. ceo > 6V
2. A low power 72.8 GHz static frequency divider implemented in AlInAs/InGaAs HBT IC technology
3. Demonstration of sub-5 ps CML ring oscillator gate delay with reduced parasitic AlInAs/InGaAs HBT
4. t at 1 mA collector current
5. 67-GHz static frequency divider using 0.2-μm self-aligned SiGe HBTs
6. 39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology
7. Submicron AlInAs/InGaAs HBT with 160 GHz ft at 1 mA collector current
8. Fabrication of InP-based integrated circuits
9. A low power 72.8 GHz static frequency divider implemented in AlInAs/InGaAs HBT IC technology
10. A 1.8V 3mW 16.8 GHz frequency divider in 0.25 m CMOS