RF circuit design aspects of spiral inductors on silicon

IEEE Journal of Solid-State Circuits

Volumn 33, Issue 12, 1998, Pages 2028-2033

  Burghartz, Joachim N ^a,b,c,d   Edelstein, D C ^b,e   Soyuer, Mehmet ^a,b,f,g,h   Ainspan, H A ^b   Jenkins, Keith A ^a,b  

^a IEEE   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c RWTH AACHEN UNIVERSITY   (Germany)

^d UNIVERSITY OF STUTTGART   (Germany)

^e Department of Obstetrics Gynecology   (United States)

^f MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^g UNIVERSITY OF CALIFORNIA   (United States)

^h Mixed Sign Commun IC Design Group

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BANDPASS FILTERS; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; OPTIMIZATION; SEMICONDUCTING SILICON; SUBSTRATES; VARIABLE FREQUENCY OSCILLATORS; VLSI CIRCUITS;

LOW NOISE AMPLIFIER; SPIRAL INDUCTOR;

ELECTRIC INDUCTORS;

EID: 0032306668     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.735544     Document Type: Article

References (11)

1. N. M. Nguyen and R. G. Meyer, "Si IC-compatible inductors and LC passive filters," IEEE J. Solid-State Circuits, vol. 25, no. 4, pp. 1028-1031, 1990.
2. J. R. Long and M. A. Copeland, "Modeling, characterization and design of monolithic inductors for silicon RF IC's," in Proc. Custom Integrated Circuits Conf. (CICC), 1996, pp. 185-188.
3. J. N. Burghartz, M. Soyuer, and K. A. Jenkins, "Integrated RF and microwave components in BiCMOS technology," IEEE Trans. Electron Devices, vol. 43, no. 9, pp. 1559-1570, 1996.
4. J. N. Burghartz et al., "Monolithic spiral inductors fabricated using a VLSI Cu-Damascene interconnect technology and low-loss substrates," in Tech. Dig. Int. Electron Devices Meeting (IEDM), 1996, pp. 99-102.
5. J. N. Burghartz, "Progress in RF inductors on silicon - Understanding substrate losses," in Tech. Dig. Int. Electron Devices Meeting (IEDM), to be published.
6. R. G. Meyer et al., "A 2.5 GHz BiCMOS transceiver for wireless LAN's," IEEE J. Solid-State Circuits, vol. 32, no. 12, pp. 2097-2104, 1997.
7. J. Burghartz, K. Jenkins, and M. Soyuer, "Multi-level spiral inductors using VLSI interconnect technology," IEEE Electron Device Lett., vol. 17, no. 9, pp. 428-430, 1996.
8. A. Pun, T. Yeung, J. Lau, F. J. R. Clement, and D. Su, "Experimental results and simulation of substrate noise coupling via planar spiral inductor in RF IC's," in Tech. Dig. Intern. Electron Devices Meeting (IEDM), 1997, pp. 325-328.
9. J. N. Burghartz, A. E. Ruehli, K. A. Jenkins, M. Soyuer, and D. Nguyen-Ngoc, "Novel substrate contact structure for high-Q silicon-integrated spiral inductors," in Tech. Dig. Int. Electron Devices Meeting (IEDM), 1997, pp. 55-58.
10. H. Ainspan et al., "A 6.25-GHz low DC power low-noise amplifier in SiGe," in Proc. Custom Integrated Circuits Conf. (CICC), 1997, pp. 177-180.
11. M. Soyuer et al., "A 2.4-GHz silicon bipolar oscillator with integrated resonator," IEEE J. Solid-State Circuits, vol. 31, no. 2, pp. 268-270, 1996.