Optimization of characteristics related to the emitter-base junction in self-aligned SEG SiGe HBTs and their application in 72-GHz-static/92-GHz-dynamic frequency dividers

IEEE Transactions on Electron Devices

Volumn 49, Issue 10, 2002, Pages 1755-1760

  Washio, Katsuyoshi ^a,b   Ohue, Eiji ^b   Oda, Katsuya ^b   Hayami, Reiko ^b   Tanabe, Masamichi ^b   Shimamoto, Hiromi ^b  

^a IEEE   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Bipolar transistors; Emitter coupled logic; Epitaxial growth; Frequency conversion; Heterojunctions; Millimeter wave bipolar integrated circuits; Millimeter wave monolithic integrated circuits (MIMICs); Optical communication

Indexed keywords

EMITTER BASE JUNCTION; EMITTER COUPLED LOGIC; FREQUENCY CONVERSION; MILLIMETER WAVE BIPOLAR INTEGRATED CIRCUITS; MILLIMETER WAVE COMMUNICATIONS; MILLIMETER WAVE MONOLITHIC INTEGRATED CIRCUITS; SELECTIVE EPITAXIAL GROWTH; SEMICONDUCTING SILICON GERMANIUM;

ELECTRIC SPACE CHARGE; EPITAXIAL GROWTH; FREQUENCY DIVIDING CIRCUITS; LOGIC GATES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTICAL COMMUNICATION; OPTICAL LINKS; OPTIMIZATION; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036772114     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.803661     Document Type: Article

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