Metalorganic vapor phase epitaxy growth of AlGaN/GaN heterostructures on sapphire substrates

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 956-960

  Hiroki, M ^a   Maeda, N ^a   Kobayashi, N ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Piezoelectric materials; B2. Semiconducting III V materials; B3. Field effect transistors

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; PIEZOELECTRIC MATERIALS; POLARIZATION; SAPPHIRE; SILANES; SUBSTRATES;

PIEZOELECTRIC POLARIZATION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0036530428     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02020-6     Document Type: Article

References (10)