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Volumn 433-436, Issue , 2003, Pages 471-476
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Identification and Annealing of Common Intrinsic Defect Centers
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Author keywords
Annealing Mechanism; Antisite; Hyperfine Parameter; Vacancies
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Indexed keywords
ANNEALING;
DEFECTS;
PARAMAGNETISM;
REACTION KINETICS;
INTRINSIC DEFECTS;
SILICON CARBIDE;
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EID: 0242628983
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.433-436.471 Document Type: Conference Paper |
Times cited : (14)
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References (24)
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