Carbon interstitiels in SiC: A model for the DII center

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 481-484

  Mattausch, Alexander ^a   Bockstedte, Michel ^a   Pankratov, Oleg ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Carbon split interstitials; Localized vibrational modes; Point defects

Indexed keywords

CARBON; CHEMICAL BONDS; ELECTRONIC PROPERTIES; LATTICE VIBRATIONS; PHONONS; PHOTOLUMINESCENCE; POINT DEFECTS; CALCULATIONS;

BULK PHONON MODE; CARBON SPLIT INTERSTITIALS; LOCALISED VIBRATIONAL MODES (LVM); VIBRATIONAL PROPERTIES; AB INITIO CALCULATIONS; CARBON SPLIT INTERSTITIAL; DI-CARBON ANTISITE; FORMATION ENERGIES; INTERSTITIALS; PHONON REPLICA; VIBRATIONAL MODES;

SILICON CARBIDE;

EID: 0242520356     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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