Anharmonicity of the C-H stretch mode in SiC: Unambiguous identification of hydrogen-silicon vacancy defect

Applied Physics Letters

Volumn 80, Issue 2, 2002, Pages 237-239

  Gali, A ^a   Aradi, B ^a   Heringer, D ^a   Choyke, W J ^b   Devaty, R P ^b   Bai, S ^b  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^b UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANHARMONICITIES; C-H STRETCH VIBRATIONS; FIRST-PRINCIPLES CALCULATION; ISOTOPE EFFECT; P-TYPE SIC; THIRD HARMONIC; VACANCY DEFECTS;

EPITAXIAL GROWTH; HYDROGEN; ISOTOPES; SILICON CARBIDE;

VACANCIES;

EID: 79955992646     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1432757     Document Type: Article

References (5)

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5. R. Jones, J. Goss, C. Ewels, and S. Öberg, Phys. Rev. B 50, 8378 (1994). prb PRBMDO 0163-1829