Carbon-vacancy related defects in 4H- and 6H-SiC

Materials Science and Engineering: B

Volumn 61-62, Issue , 1999, Pages 202-206

  Son, N T ^a   Chen, W M ^a   Lindstrom J L ^a,b   Monemar, B ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

Author keywords

Electron irradiation; Electron paramagnetic resonance; SiC; Vacancy related defects

Indexed keywords

CARBON; COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; ELECTRON IRRADIATION; ELECTRON SPIN RESONANCE SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS;

FINE STRUCTURE PARAMETERS;

SILICON CARBIDE;

CARBON;

EID: 0033618693     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00502-9     Document Type: Article

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