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Volumn 66, Issue 12, 2002, Pages 1252081-1252087

Isolated oxygen defects in 3C- and 4H-SiC: A theoretical study

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; SILICON CARBIDE;

EID: 0037105311     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.125208     Document Type: Article
Times cited : (45)

References (36)
  • 18
    • 33744653842 scopus 로고    scopus 로고
    • note
    • C has an effective-mass-like state in 3C-SiC. Such states are built from the states of the conduction-band minima. However, the 2 x 2 x 2 MP set does not include any states near the X point of the primitive Brillouin zone (BZ), where the minimum of the conduction band is in 3C-SiC. The 3 x 3 x 3 MP set contains the center of the reduced BZ which for the 128-atom supercell represents the X point of the primitive BZ.
  • 20
    • 33744668712 scopus 로고    scopus 로고
    • note
    • In supercell calculations the overall neutrality of the cells has to be maintained even if the defect is charged. This is achieved by applying a jellium charge of opposite sign. The Coulomb interaction over the repeated cells is a source of additional error, sometimes corrected for by the procedure described in Ref. 36. In our experience, however, this procedure leads to overcorrection.
  • 27
    • 33744580554 scopus 로고    scopus 로고
    • note
    • Such a configuration has been found out in earlier molecular cluster calculations.
  • 28
    • 33744661273 scopus 로고    scopus 로고
    • note
    • * state was occupied. If the gap is reproduced correctly as in the SC calculation then the electrons should occupy an EMT state.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.