DII PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 345-348

  Carlsson, F H C ^a   Sridhara, S G ^a   Hallen A ^b   Bergman, J P ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Annealing; DII; Ion Implantation; SiC

Indexed keywords

ANNEALING; ELECTRON IRRADIATION; ION IMPLANTATION; PHOTOLUMINESCENCE;

DEFECT FORMATION;

SILICON CARBIDE;

EID: 0242460513     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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