p-to-n ion beam milling conversion in specially doped CdxHg 1-xTe

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3182, Issue , 1997, Pages 383-387

  Izhnin, I I ^a   Izhnin, A I ^a   Kurbanov, K R ^b   Prytuljak, B B ^a  

^a R and D Institute for Materials   (Ukraine)

^b Joint Stock Company Pure metals   (Ukraine)

Author keywords

CdxHg1 xTe; Electric properties; Ion beam milling; p n junction; Photodiode

Indexed keywords

BEAM PLASMA INTERACTIONS; ELECTRIC PROPERTIES; HETEROJUNCTION BIPOLAR TRANSISTORS; HOLE CONCENTRATION; IMPURITIES; ION BEAMS; ION BOMBARDMENT; IONS; MATERIALS SCIENCE; MERCURY (METAL); MILLING (MACHINING); PHOTODIODES; POLLUTION; SEMICONDUCTOR JUNCTIONS; TELLURIUM COMPOUNDS; VACANCIES;

CDXHG1-XTE; DONOR IMPURITIES; DOPED SAMPLES; ELECTRICAL PROPERTIES; ELECTRON CONCENTRATIONS; ION BEAM MILLING; ION BEAM MILLINGS; IRRADIATION DOSES; LOW ENERGIES; P STRUCTURES; P-N JUNCTION; RESIDUAL DONORS;

CADMIUM COMPOUNDS;

EID: 57649108767     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.280463     Document Type: Conference Paper

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