Transport properties of reactive-ion-etching-induced p-to-n type converted layers in HgCdTe

Journal of Electronic Materials

Volumn 31, Issue 7, 2002, Pages 652-659

  Nguyen, T ^a   Antoszewski, J ^a   Musca, C A ^a   Redfern, D A ^a   Dell, J M ^a   Faraone, L ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

Carrier transport; HgCdTe; RIE; Type conversion

Indexed keywords

CARRIER MOBILITY; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; HALL EFFECT; LIQUID PHASE EPITAXY; REACTIVE ION ETCHING; SEMICONDUCTOR DOPING; THERMAL EFFECTS; TRANSPORT PROPERTIES;

CARRIER TRANSPORT;

MERCURY COMPOUNDS;

EID: 0036637772     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0214-4     Document Type: Conference Paper

References (6)