Planar n-on-p ion milled mid-wavelength and long-wavelength infrared diodes on molecular beam epitaxy vacancy-doped CdHgTe on CdZnTe

Journal of Electronic Materials

Volumn 31, Issue 7, 2002, Pages 710-714

  Haakenaasen, Randi ^a   Steen, H ^a   Lorentzen, T ^a   Trosdahl Iversen, L ^a   Van Rheenen, A D ^a   Syversen, H ^a  

^a NORWEGIAN DEFENCE RESEARCH ESTABLISHMENT FFI   (Norway)

Author keywords

CdHgTe; CdZnTe; Composition gradient; HgCdTe; Ion milling; MBE; n on p diodes; Photodiodes; Planar diodes

Indexed keywords

ANNEALING; CADMIUM COMPOUNDS; DOPING (ADDITIVES); INFRARED DEVICES; MOLECULAR BEAM EPITAXY;

INFRARED DIODES;

PHOTODIODES;

EID: 0036637884     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0224-2     Document Type: Conference Paper

References (13)

1. 2000 US workshop on the physics and chemistry of II-VI materials