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Journal of Crystal Growth

Volumn 224, Issue 1-2, 2001, Pages 52-58

Dynamics of native point defects in H2 and Ar plasma-etched narrow gap (HgCd)Te

(8) Belas, E a Grill, R a Franc, J a Moravec, P a Varghova R a Hoschl P a Sitter, H b Toth, A L c

a CHARLES UNIVERSITY (Czech Republic)

b JOHANNES KEPLER UNIVERSITY LINZ (Austria)

c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

Author keywords

A1. Defects; A1. Diffusion; A1. Reactive ion etching

Indexed keywords

ARGON; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY MEASUREMENT; MERCURY (METAL); PLASMA ETCHING; POINT DEFECTS; REACTIVE ION ETCHING;

MERCURY INTERSTITIALS;

HYDROGEN;

EID: 0035309522 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00855-7 Document Type: Article

Times cited : (32)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.