Characterisation of dark current in novel Hg1-xCdxTe mid-wavelength infrared photovoltaic detectors based on n-on-p junctions formed by plasma-induced type conversion

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 1106-1110

  Rais, M H ^a   Musca, C A ^a   Antoszewski, J ^a   Dell, J M ^a   Nener, B D ^a   Faraone, L ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ION IMPLANTATION; LIQUID PHASE EPITAXY; MATHEMATICAL MODELS; PLASMA APPLICATIONS; REACTIVE ION ETCHING; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR JUNCTIONS;

DARK CURRENT; DYNAMIC RESISTANCE; MERCURY CADMIUM TELLURIDE; MID WAVELENGTH INFRARED PHOTODIODE;

PHOTODIODES;

EID: 0033717955     PISSN: 00220248     EISSN: None     Source Type: None    
DOI: 10.1016/S0022-0248(00)00283-9     Document Type: Article

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