SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 30, Issue 6, 2001, Pages 704-710

Characterization of a new planar process for implementation of p-on-n HgCdTe heterostructure infrared photodiodes

(3) Bahir, G a Garber, V a Dust, A a

a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

Author keywords

Heterostructure; HgCdTe; Infrared photodiode; Planar process

Indexed keywords

ANNEALING; ARSENIC; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; HETEROJUNCTIONS; INFRARED DEVICES; ION BEAMS; LIQUID PHASE EPITAXY; MERCURY COMPOUNDS; OPTICAL PROPERTIES; TEMPERATURE;

DARK CURRENT; INFRARED PHOTODIODES; ION BEAM MILLING; PLANAR PROCESS;

PHOTODIODES;

EID: 0035360043 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/BF02665859 Document Type: Article

Times cited : (6)

References (19)

1
- 0027643971
- (1993) J. Electron. Mater. , vol.22 , pp. 1049
- Arias, J.M.¹ Pasko, J.G.² Zandian, M.³ Shin, S.H.⁴ Williams, G.M.⁵ Bubulac, L.O.⁶ De Wames, R.E.⁷ Tennant, W.E.⁸

2
- 0000740263
- (1993) Appl. Phys. Lett. , vol.62 , pp. 976
- Arias, J.M.¹ Pasko, J.G.² Zandian, M.³ Shin, S.H.⁴ Williams, G.M.⁵ Bubulac, L.O.⁶ De Wames, R.E.⁷ Tennant, W.E.⁸

3
- 0001241944
- (1997) J. Electron. Mater. , vol.26 , pp. 656
- D'Souza, A.I.¹ Dawson, L.C.² Anderson, E.J.³ Markum, A.D.⁴ Tennant, W.E.⁵ Bubulac, L.O.⁶ Zandian, M.⁷ Pasko, J.G.⁸ Mclevige, W.V.⁹ Edwall, D.D.¹⁰

4
- 0000531705
- (1991) J. Vac. Sci. Technol. , vol.89 , pp. 1724
- Pultz, G.N.¹ Norton, P.W.² Kruger, E.E.³ Reine, M.⁴

5
- 0027020610
- (1992) Proc. SPIE , vol.1735 , pp. 109
- Tung, T.¹ DeArmond, L.V.² Herald, R.F.³ Herning, P.E.⁴ Kalisher, M.H.⁵ Olson, D.A.⁶ Risser, R.F.⁷ Stevens, A.P.⁸ Tighe, S.J.⁹

6
- 0032673235
- (1999) J. Electron. Mater. , vol.28 , pp. 596
- Tobin, S.P.¹ Weiler, M.H.² Hutchins, M.A.³ Parodos, T.⁴ Norton, P.W.⁵

7
- 0004538934
- (1981) U.K. Patent 2,095,898
- Wotherspoon, J.T.M.¹

8
- 0023420125
- (1987) Electron. Lett. , vol.23 , pp. 978
- Blackman, M.V.¹ Charlton, D.E.² Jenner, M.D.³ Purdy, D.R.⁴ Wotherspoon, J.M.T.⁵ Eliott, C.T.⁶ White, A.M.⁷

9
- 0004498194
- (1989) J. Vac. Sci. Technol. A , vol.7 , pp. 978
- Bahir, G.¹ Finkman, E.²

10
- 0004543733
- (1990) Sov. Phys.-Semicond. , vol.24 , pp. 1379
- Ivanov-Omskii, V.I.¹ Mironov, K.E.² Mynbajev, K.D.³

11
- 0027664422
- (1993) Semicond. Sci. Technol. , vol.8 , pp. 1695
- Beals, E.¹ Hoschl, P.² Grill, R.³ Franc, J.⁴ Moravec, P.⁵ Lischka, K.⁶ Toth, A.⁷

12
- 0033702183
- (2000) J. Electron. Mater. , vol.29 , pp. 837
- Antoszewski, J.¹ Musca, C.A.² Dell, J.M.³ Faraone, L.⁴

13
- 0000789761
- (1992) J. Vac. Sci. Technol. B , vol.10 , pp. 1460
- Elkind, J.L.¹

14
- 84955018580
- (1990) J. Vac. Sci. Technol. A , vol.8 , pp. 1251
- Eliott, C.T.¹ Gordon, N.T.² Hall, R.S.³ Crimes, G.⁴

15
- 0035809585
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1331
- Bahir, G.¹ Garber, V.² Rosenfeld, D.³

16
- 0000531704
- (1991) J. Vac. Sci. Technol. B , vol.9 , pp. 1740
- Wang, C.C.¹

17
- 0032643157
- (1999) J. Electron. Mater. , vol.28 , pp. 611
- D'Souza, A.I.¹ Wijewarnasuria, P.S.² Dewames, R.E.³ Hildebrandt, G.⁴ Bajaj, J.⁵ Edwall, D.D.⁶ Pasko, J.G.⁷ Arias, J.M.⁸

18
- 0033414539
- (1999) J. Vac. Sci. Technol. A , vol.17 , pp. 2503
- Smith, E.P.G.¹ Musca, C.A.² Redfern, D.A.³ Dell, J.M.⁴ Faraone, L.⁵

19
- 85037403823
- Extended Abstracts the 2000 US Workshop on the Physics and Chemistry of II-VI Materials , pp. 199
- Haakenaasen, R.¹ Moen, T.² Colin, T.³ Steen, H.⁴ Trosdahl-Iversen, L.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.