Passivation effects on reactive-ion-etch-formed n-on-p junctions in HgCdTe

Journal of Electronic Materials

Volumn 31, Issue 7, 2002, Pages 743-748

  White, J K ^a   Antoszewski, J ^a   Pal, R ^b   Musca, C A ^a   Dell, J M ^a   Faraone, L ^a   Piotrowski, J ^c  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^b SOLID STATE PHYSICS LABORATORY   (India)

^c Vigo Systems   (Poland)

Author keywords

Bake stability; CdTe; HgCdTe; Passivation; RIE; Type conversion; ZnS

Indexed keywords

LOW TEMPERATURE EFFECTS; MERCURY COMPOUNDS; PASSIVATION; PHOTODIODES; REACTIVE ION ETCHING; VACUUM;

BAKE STABILITY; TYPE CONVERSION;

SEMICONDUCTOR JUNCTIONS;

EID: 0036638201     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0230-4     Document Type: Article

References (9)