Peculiarities of MCT ion etching in RF mercury glow discharge

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3725, Issue , 1999, Pages 299-303

  Savitsky, Volodymyr ^a   Mansurov, Leonid ^a   Fodchuk, Igor ^a   Izhnin, Igor ^a   Virt, Igor ^a   Lozynska, Mariya ^a   Evdokimenko, Andrij ^a  

^a IVAN FRANKO NATIONAL UNIVERSITY OF LVIV   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC POTENTIAL; GLOW DISCHARGES; MERCURY COMPOUNDS; REACTIVE ION ETCHING; VELOCITY;

BIAS VOLTAGE; DISTURBED LAYER; ELECTROPHYSICAL PARAMETERS; MERCURY CADMIUM TELLURIDE; QUASI CLOSED VOLUME;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032635471     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)