Scanning laser microscopy of reactive ion etching induced n-type conversion in vacancy-doped p-type HgCdTe

Applied Physics Letters

Volumn 70, Issue 25, 1997, Pages 3443-3445

  Siliquini, J F ^a   Dell, J M ^a   Musca, C A ^a   Faraone, L ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DISCRETE ELEMENT MODELS; LASER BEAM INDUCED CURRENT MEASUREMENTS; SCANNING LASER MICROSCOPY;

CARRIER CONCENTRATION; ELECTRIC CURRENT MEASUREMENT; ELECTRON ENERGY LEVELS; LASER BEAM EFFECTS; MATHEMATICAL MODELS; MICROSCOPIC EXAMINATION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

REACTIVE ION ETCHING;

EID: 0031162473     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119159     Document Type: Article

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