New generation of infrared photodetectors

Sensors and Actuators, A: Physical

Volumn 67, Issue 1-3, 1998, Pages 146-152

  Piotrowski, Jozef ^a   Rogalski, Antoni ^b  

^a VIGO SYSTEM S A   (Poland)

^b MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Dual band detectors; Epitaxial layers; HgCdTe photodiodes; Multiple junction diodes; Photon detectors

Indexed keywords

BOLOMETERS; HETEROJUNCTIONS; PHOTODETECTORS; PHOTODIODES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING TELLURIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

DUAL-BAND DETECTORS; MULTIPLE JUNCTION DIODES;

INFRARED DETECTORS;

EID: 0043286548     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00010-7     Document Type: Article

References (30)

1. A. Rogalski, J. Piotrowski, Intrinsic infrared detectors, Prog. Quant. Electr. 12 (1988) 87-289.
2. J. Piotrowski, W. Galus, M. Grudzień, Near room-temperature IR photo-detectors, Infrared Phys. 31 (1991) 1-48.
3. C.T. Elliott, N.T. Gordon, Infrared detectors, in: C. Hilsum (Ed.), Handbook on Semiconductors, North-Holland, Amsterdam, vol. 4, 1993, pp. 841-936.
4. J. Piotrowski, W. Gawron, Z. Djuric, New generation of near-room-temperature photodetectors, Opt. Eng. 33 (1994) 1413-1421.
5. xTe detectors, in: A. Rogalski (Ed.), Infrared Photon Detectors, SPIE Optical Engineering Press, Bellingham, 1995, pp. 391-493.
6. K. Adamiec, A. Rogalski, J. Rutkowski, Progress in infrared detector technology, J. Tech. Phys. 38 (1997) 431-488.
7. A. Rogalski, New Ternary Alloy Systems for Infrared Detectors, SPIE Optical Engineering Press, Bellingham, 1994.
8. A. Rogalski (Ed.), Infrared Photon Detectors, SPIE Optical Engineering Press, Bellingham, 1995.
9. H. Asahi, Thalium compounds: a promissing new class of III-V materials for laser diodes, Compound Semicond. 2 (1997) 34-36.
10. J. Piotrowski, W. Gawron, Ultimate performance of infrared photodetectors and figure of merit of detector material, Infrared Phys. Technol. 38 (1997) 63-68.
11. J. Piotrowski, M. Razeghi, Improved performance of IR photodetectors with 3D gap engineering, Proc. SPIE 2397 (1995) 180-192.
12. K. Adamiec, M. Grudzien, Z. Nowak, J. Pawluczyk, J. Piotrowski, J. Antoszewski, L. Faraone, C. Musca, Isothermal vapor phase epitaxy as a versatile technology for infrared photodetectors, Proc. SPIE 2999 (1997) 34-43.
13. O.K. Wu, HgCdTe for cooled and uncooled IRFPAs: Dual-band detectors and beyond, Compound Semiconductor, 26-27 (July/August) (1996).
14. W.E. Tennant, C.A. Cockrum, J.B. Gilpin, M.A. Kinch, M.B. Reine, R.P. Ruth, Key issues in HgCdTe-based focal plane arrays: a industry perspective, J. Vac. Sci. Technol. B 10 (1992) 1359-1369.
15. +-on-p versus p-on-n structures, J. Appl. Phys. 77 (1995) 3505-3512.
16. E.R. Blazejewski, J.M. Arias, G.M. Williams, W. McLevige, M. Zandian, J. Pasko, Bias-switchable dual-band HgCdTe infrared photodetector, J. Vac. Sci. Technol. B 10 (1992) 1626-1632.
17. M.B. Reine, P.W. Norton, R. Starr, M.H. Weiler, M. Kestigian, B.L. Musicant, P. Mitra, T. Schimert, F.C. Case, I.B. Bhat, H. Ehsani, V. Rao, Independently accessed back-to-back HgCdTe photodiodes: a new dual-band infrared detector, J. Electron. Mater. 24 (1995) 669-678.
18. P. Mitra, S.L. Barnes, F.C. Case, M.B. Reine, P. O'Dette, R. Starr, A. Hairston, K. Kuhler, M.H. Weiler, B.L. Musicant, MOCVD of band-gap-engineered HgCdTe p-n-N-P dual-band infrared detector arrays, J. Electron. Mater. 26 (1997) 482-487.
19. T. Ashley, C.T. Elliott, A.T. Harker, Non-equilibrium modes of operation for infrared detectors, Infrared Phys. 26 (1986) 303-315.
20. C.T. Elliott, Non-equilibrium modes of operation of narrow-gap semiconductor devices, Semicond. Sci. Technol. 5 (1990) S30-S37.
21. xTe detectors and emitters, Proc. SPIE 2744 (1996) 452-452.
22. J. Piotrowski, W. Gawron, Extension of longwavelength IR photovoltaic detector operation to near room-temperatures, Infrared Phys. Technol. 36 (1995) 1045-1051.
23. Vigo Data Sheets, Warsaw (1997).
24. P.R. Norton, Infrared image sensor status, Proc. SPIE 2274 (1994) 82-92.
25. L.J. Kozlowski, HgCdTe focal plane arrays for high performance infrared cameras, Proc. SPIE 3179 (1997) 200-211.
26. R.B. Bailey, L.J. Kozlowski, J. Chen, D.Q. Bui, K. Vural, D.E. Edwall, R.V. Gil, A.B. Vanderwyck, E.R. Gertner, M.B. Gubala, 256×256 hybrid HgCdTe infrared focal plane arrays, IEEE Trans. Electron Devices 38 (1991) 1104-1109.
27. L.J. Kozlowski, R.B. Bailey, D.E. Cooper, K. Vural, E.R, Gertner, W.E. Tennant, Large staring IRFPA's of HgCdTe on alternative substrates, Proc. SPIE 1540 (1991) 250-261.
28. T. Tung, L.V. DeArmond, R.F. Herald, P.E. Herning, M.H. Kalisher, D.A. Olson, R.F. Risser, A.P. Stevens, S.J. Tighe, State of the art of Hg-melt LPE HgCdTe at Santa Barbara research center, Proc. SPIE 1735 (1992) 109-134.
29. S.M. Johnson, T.J. deLyon, C.A. Cockrum, W.J. Hamilton, T. Tung, F.I. Gesswein, B.A. Baumgratz, L.M. Ruzicka, O.K. Wu, J.A. Torh, Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal plane arrays, J. Electron. Mater. 24 (1995) 467-473.
30. T.J. de Lyon, R.D. Rajavel, J.E. Jensen, O.K. Wu, S.M. Johnson, C.A. Cockrum, G.M. Venzor, Heteroepitaxy of HgCdTe(112) infrared detector structures on Si(112) substrates by molecular-beam epitaxy, J. Electron. Mater. 25 (1996) 1341-1346.