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Journal of Electronic Materials

Volumn 31, Issue 7, 2002, Pages 738-742

Formation and propagation of p-n junction in p-(HgCd) Te caused by dry etching

(7) Belas, E a Grill, R a Franc, J a Sitter, H b Moravec, P a Hoschl P a Toth, A L c

a CHARLES UNIVERSITY (Czech Republic)

b JOHANNES KEPLER UNIVERSITY LINZ (Austria)

c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

Author keywords

(HgCd)Te; Chemical diffusion; Dry etching; Type conversion

Indexed keywords

DIFFUSION; DRY ETCHING; MERCURY COMPOUNDS; REACTION KINETICS;

TYPE CONVERSION;

SEMICONDUCTOR JUNCTIONS;

EID: 0036638602 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-002-0229-x Document Type: Article

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.