Depth and lateral extension of ion milled pn junctions in CdxHg1-xTe from electron beam induced current measurements

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 427-432

  Haakenaasen, R ^a   Moen, T ^a   Colin, T ^a   Steen, H ^a   Trosdahl Iversen, L ^a  

^a NORWEGIAN DEFENCE RESEARCH ESTABLISHMENT FFI   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

CONVERSION DEPTH; ELECTRON-BEAM-INDUCED CURRENT; ION MILLING; JUNCTION DEPTH; LATERAL EXTENSION; MILLING TIME; P-N JUNCTION; P-N JUNCTION DEPTH; TOP SURFACE; VACANCY CONCENTRATION;

MILLING (MACHINING); MOLECULAR BEAM EPITAXY; VACANCIES;

CADMIUM COMPOUNDS;

EID: 0036137214     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1419214     Document Type: Article

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