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Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 1117-1122

Determination of the migration energy of Hg interstitials in (HgCd)Te from ion milling experiments

(7) Belas, E a Grill, R a Franc, J a Toth, A b Hoschl P a Sitter, H c Moravec, P a

a CHARLES UNIVERSITY (Czech Republic)

b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

c JOHANNES KEPLER UNIVERSITY LINZ (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DIFFUSION IN SOLIDS; ELECTRON TRANSPORT PROPERTIES; ION BEAMS; IONS; MATHEMATICAL MODELS; MERCURY (METAL); SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

ION BEAM MILLING; MERCURY CADMIUM TELLURIDE; MERCURY INTERSTITIALS; MIGRATION ENERGY;

SEMICONDUCTING TELLURIUM COMPOUNDS;

EID: 0030562213 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00696-6 Document Type: Article

Times cited : (43)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.