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Surface and Coatings Technology

Volumn 158-159, Issue , 2002, Pages 732-736

Type conductivity conversion in As-, Sb-doped p-CdxHg1-xTe under ion beam milling

(5) Berchenko, N N a Bogoboyashchiy, V V b Izhnin, I I c Ilyina, Yu S d Vlasov, A P e

a UNIVERSITY OF RZESZÓW (Poland)

b KREMENCHUK MYKHAILO OSTROHRADSKYI NATIONAL UNIVERSITY (Ukraine)

c R and D Institute for Materials SRC Carat (Ukraine)

d UNIVERSITY OF HAMBURG (Germany)

e IVAN FRANKO NATIONAL UNIVERSITY OF LVIV (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

COMMINUTION; CONCENTRATION (PROCESS); DIFFUSION; DOPING (ADDITIVES); ENTHALPY; POINT DEFECTS;

EPITAXIAL LAYERS;

ION BEAMS;

MILLING;

EID: 0036396023 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/S0257-8972(02)00264-5 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.