Avalanche multiplication in submicron Al x Ga 1-x As/GaAs multilayer structures

Journal of Applied Physics

Volumn 88, Issue 5, 2000, Pages 2601-2608

  Chia, C K ^a   David, J P R ^b   Plimmer, S A ^b   Rees, G J ^b   Grey, R ^b   Robson, P N ^b  

^a SCHOOL OF PHYSICS   (Malaysia)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM ALLOYS; ENERGY DISSIPATION; GALLIUM; GALLIUM ARSENIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; IONIZATION; MULTILAYERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR ALLOYS;

AVALANCHE MULTIPLICATION; CONDUCTION BAND EDGE; ELECTRON IONIZATION; HETEROJUNCTION STRUCTURES; HOLE MULTIPLICATION; MONTE CARLO MODEL; MULTILAYER STRUCTURES; SYSTEMATIC STUDY;

GALLIUM ALLOYS;

EID: 0013446528     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.1286329     Document Type: Article

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