Analysis of thermal stresses in metal interconnects with multilevel structures

Microelectronics Reliability

Volumn 42, Issue 2, 2002, Pages 259-264

  Kilijanski, M S ^a   Shen, Y L ^a  

^a University of New Mexico   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ASPECT RATIO; COMPUTER SIMULATION; COOLING; DIELECTRIC MATERIALS; FINITE ELEMENT METHOD; METALLIZING; REFRACTORY MATERIALS; THERMAL STRESS;

METAL INTERCONNECTS;

MICROELECTRONICS;

EID: 0036472357     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00239-6     Document Type: Article

References (25)

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7. Characteristics of thermal stresses in Al(Cu) fine lines 2. Passivated line structures
8. Investigation of the stresses in continuous thin films and patterned lines by X-ray diffraction
9. Measurement and interpretation of strain relaxation in passivated Al-0.5%Cu lines
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11. Stresses, deformation, and void nucleation in locally debonded metal interconnects
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13. Voiding induced stress redistribution and its reliability implications in metal interconnects
14. Thermal stresses in multilevel interconnections: Aluminum lines at different levels
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23. Modeling of thermal stresses in metal interconnects: Effects of line aspect ratio