Low frequency noise measurements: Applications, methodologies and instrumentation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5113, Issue , 2003, Pages 350-367

  Ciofi, C ^a   Neri, B ^b  

^a INFM   (Italy)

^b Dipto Ingegneria dell'Informazione   (Italy)

Author keywords

Electron device; Low noise instrumentation; Noise measurements; Reliability; Spectral analysis

Indexed keywords

FAILURE ANALYSIS; RELIABILITY; SIGNAL NOISE MEASUREMENT; SIGNAL TO NOISE RATIO; SOLID STATE DEVICES; SPECTRUM ANALYSIS;

LOW FREQUENCY NOISE MEASUREMENTS; SIGNAL DEGRADATION;

VLSI CIRCUITS;

EID: 0042324418     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.489652     Document Type: Conference Paper

References (43)

1. F N Hooge and A M Hoppenbrouwers, 1/f noise in continuous thin gold films, Physica, 45, 386-92, 1969.
2. J L Vossen, Screening of metal film defects by current noise measurements, Appl. Phys. Lett, 23 287-9, 1973.
3. G. Bertotti, M. Celasco, F. Fiorillo and P. Mazzetti, Thermal equilibrium properties of vacancies in metal through current noise measurements, J. Appl. Phys. 50, 6948, 1979.
4. C Ciofi, B Neri, Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices, Journal of Physics D 33, R199-R216, 2000
5. T Boutchacha, G Ghibaudo, G. Guégan and T. Skotnicki, Low frequency noise characterization of 0.18μm Si CMOS transistors, Microelectronics and Reliability, 37, 1599-1602, 1997.
6. R. Landauer, The noise is the signal, Nature 392, 658-659, 1998
7. G Iannaccone, G Lombardi, M Macucci, B Pellegrini, Enhanced shot noise in resonant tunnelling, Phys. Rev. Lett. 80, 1054-1057, 1998
8. B Neri, C Ciofi, V Dattilo, Noise and Fluctuations in Submicrometric Al-Si Interconnect Lines, IEEE Trans. Electr. Dev. 44, 1454-1459, 1997.
9. F Crupi, G Iannaccone, B Neri, C Ciofi, S Lombardo, Shot noise partial suppression in the SILC regime, Microelectron. Reliab. 40, 1605-1608, 2000.
10. F Crupi, G Iannaccone, C Ciofi, B Neri, S Lombardo, C Pace, Low frequency noise in unstressed/stressed thin oxide metal-oxide-semiconductor capacitors,Solid State Electronics, 46, 1807-1813 2002.
11. A Diligenti, B Neri, P E Bagnoli, A Barsanti, M Rizzo, Electromigration detection by means of low-frequency noise measurements in thin film interconnections, IEEE Trans. El.Dev.Lett., 6, 606-608, 1985.
12. T M Chen, T P Djeu, R D Moore, Electromigration and 1/f noise of aluminum thin films, Proc. 1985 IEEE Rel.Phy. Symp., 87-92, 1985.
13. A Diligenti et al., A study of electromigration in aluminum and aluminum-silicon thin film resistors using noise technique, Solid State El., 32, 11-16, 1989.
14. α noise and fabrication variation of TiW/Al VLSI interconnections, IEEE Electron Device Lett.,11, 523-526, 1990.
15. Z N Celik-Butler, Min Ye, Prediction of Electromigration failure in W/Al-Cu multilayered metallization by 1/f noise measurements, Solid State Electronics, 35, 1209-1212, 1992.
16. C Ciofi, M De Marinis, B Neri, Ultralow-Noise PC-Based Measurement System for the Characterization of the Metallizations of Integrated Circuits, IEEE Trans. Instr. Meas., 46, 798-793, 1997.
17. C Ciofi, I Ciofi, S Di Pascoli, B Neri, Temperature controlled oven for low noise measurement systems, IEEE Trans. Instr. Meas. 49, 546-549, 1999.
18. P Olivo, T N Nguyen, B Ricco, High-field-induced degradation in ultra-thin SiO2 films, IEEE Trans. Electr. Dev., 35, 2259-2267, 1988.
19. S Takagi, N Yasuda, A Toriumi, A new I-V model for stress-induced leakage current including inelastic tunneling, IEEE Trans. Electron. Dev., 46, 348-354, 1998.
20. K Okada, K Taniguchi, Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides, Appl. Phys. Lett., 70, 351-353, 1997.
21. M Depas, T Nigam, M. Heyns, Soft breakdown of ultra-thin gate oxide layers, IEEE Trans. Electron. Dev., 43, 1499-1504, 1996.
22. F Crupi, R Degraeve, G Groeseneken, T Nigam, H E Maes: Characteristics and correlated fluctuations of the gate and substrate current after oxide soft-breakdown, Ext. Abst of the 1998 SSDM.
23. T Tomita, H Utsunomiya, T Sakura, Y Kamakura, K Taniguhci, A new soft breakdown model for thin thermal SiO2 films under constant current stress, IEEE Trans. Electron. Dev., 46, 159-164, 1999.
24. B E Weir, P J Silverman, D Monroe, K S Krisch, M A Alam, G B Alers, T W Sorsch, G L Timp, F Baumann, C T Liu, T Ma, D Hwang, Ultra-thin gate dielectrics: they break down, but do they fail?, IEDM Tech. Dig., 73-76, 1997.
25. R Degraeve, G Groeseneken, R Bellens, M Depas, H E Maes, A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides, IEDM Tech. Dig., 863, 1995.
26. G Ghibaudo; O Roux-dit-Buisson, Low frequency fluctuations in scaled-down silicon CMOS devices: status and trends, Proc. ESSDERC 94, 693-700, 1994.
27. E.Miranda, J.Sune, et al. Soft breakdown fluctuation events in ultrathin SiO2 layers, Applied-Physics-Letters. 73, 490-2, 1998.
28. O Roux et al. Investigation of drain current RTS noise in small area silicon MOS transistors, Microelectronic-Engineering, 15, 547-50, 1991.
29. R Rofan, C Hu, Stress-Induced Oxide Leakage, IEEE Electron Dev. Let., 12, 632-634, 1991.
30. F Crupi, B Neri, S Lombardo, Pre-breakdown in thin oxide films, El.Dev. Letters., 21, 319-321, 2000.
31. F Crupi. C Ciofi, C Pace, G Iannaccone, B Neri, Noise as a probe of the charge transport mechanisms through thin oxides in MOS structures, Fluctuation and Noise Letters, 1, L61-L64, 2001.
32. C Ciofi, F Crupi, C Pace, G Scandurra, M Patanè, A new circuit topology for the realization of very low noise, wide bandwidth transimpedance amplifier, submitted to IEEE Trans. Instr. Meas.
33. C Ciofi, R Giannetti, V Dattilo, B Neri, Ultra Low-Noise Current Sources, IEEE Trans. Instr. Meas. 47, 78-81, 1998.
34. C Ciofi, M De Marinis, B Neri, Wafer Level Measurement System for SARF Characterization of Metal Lines, Microelectron. Reliab. 36, 1851-1855, 1996.
35. L Baracchino, G Basso, C Ciofi, B Neri, Ultralow-Noise, Programmable, Voltage Source, IEEE Trans. Instr. Meas. 46, 1256-1261, 1997.
36. C Ciofi, High Precision, Integrable, Static Memory for Analog Signals, Alta Frequenza 8, 63-66, 1996.
37. G Scandurra C Ciofi, R/βR Ladder Networks for the Design of High Accuracy Static Analog Memory, to appare on IEEE Trans. Circ. Syst. I
38. C Pace, C Ciofi, F Crupi Very low noise, high accuracy, programmable voltage reference, to appare in IEEE Trans. Instr. Meas
39. V Dattilo, B Neri, C Ciofi, Low frequency noise evolution during lifetime tests of lines and vias subjected to electromigration, Microelectron. Reliab. 40, 1323-1327, 2000
40. M Macucci, B Pellegrini Very sensitive measurement method of electron device current noise, IEEE Trans. Instrum. Meas., 40, 7-12, 1991
41. M Sampietro, L Fasoli, and G Ferrari Spectrum analyzer with noise reduction by cross correlation technique on two channels, Rev. Sci. Instrum., 70, 2520-2525, 1999
42. E Rubiola, V Giordano A correlation-based noise measrurement scheme showing sensitivity below the thermal floor, Proceedings of International Conference on Noise in Physical Systems and 1/f Fluctuations. Hong Kong, 483-486, 1999
43. C Ciofi, F Crupi, C Pace, A new method for high sensitivity noise measurements, IEEE Trans. Instr. Meas., 51, 656-659, 2002