Shot noise partial suppression in the SILC regime

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1605-1608

  Crupi, F ^a,b   Iannaccone, G ^a   Neri, B ^a   Ciofi, C ^b   Lombardo, S ^c  

^a UNIVERSITY OF PISA   (Italy)

^b UNIVERSITY OF MESSINA   (Italy)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001275838     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00177-3     Document Type: Article

References (6)

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2. 2PROM devices", in IEDM Tech. Dig., pp. 343-346, 1996
3. J.H. Stahis and D.J. DiMaria, "Reliability projection for ultra-thin oxides at low voltage", IEDM Tech. Dig., pp. 167-170, 1998
4. 2 interface observed by Fowler-Noedheim tunneling", J. Appl. Phys., vol. 53, n. 1, pp. 559-567, 1982
5. K. Kassmi, J. Prom, G. Sarrabayrouse, "Electrical conduction in MOS capacitors with an ultra-thin oxide layer", Solid-State Electron., vol.34, p.509, 1991
6. R. Moazzami, C. Hu, "Stress- induced current in thin silicon dioxide films", IEDM Tech. Dig., pp. 139-142, 1992